Infineon IPP80N06S2L11AKSA2

Name: Infineon IPP80N06S2L11AKSA2
Brand: Infineon
SKU: IPP80N06S2L11AKSA2

55V, N-Ch, 11 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS

$ 0.913

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Rochester Electronics		IPP80N06S2L11AKSA2	19,422				1.100	0.913	0.814	21h
Farnell		IPP80N06S2L11AKSA1	0	1	1.205*	1.205*	0.867*	0.609*	0.501*	20h
Verical	2	IPP80N06S2L11AKSA2	11,221	273				1.141	1.018
Win Source	2	WS-IPP80N06S2L11AKSA2	117	13			3.382	3.032	3.032	21h
Worldway Electronics	4	IPP80N06S2L11	28,352	7						1h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP80N06S2L11AKSA2.

IHS

Datasheet8 pages15 years ago

iiiC

Newark

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPP80N06S2L11AKSA2

InfineonSPP80N06S2L-11

Price @ 1000

$ 0.913

$ 0.591

Stock

253,396

92,380

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

80 A

Threshold Voltage

Rds On Max

10.7 mΩ

11 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

158 W

Input Capacitance

2.075 nF

2.65 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-06-20

Lifecycle StatusProduction (Last Updated: 4 months ago)

LTB Date2020-03-15

LTD Date2020-09-15

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Descriptions

Descriptions of Infineon IPP80N06S2L11AKSA2 provided by its distributors.

55V, N-Ch, 11 mΩ max, Automotive MOSFET, TO-220, OptiMOS™, PG-TO220-3, RoHS

Infineon SCT

Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube

Verical

OPTIMOS POWER-TRANSISTOR Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green package (lead free); Ultra low Rds(on); 100% Avalanche tested | Benefits: world's lowest RDS at 55V (on) in planar technology; highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors

Infineon