Infineon IPP220N25NFDAKSA1

Name: Infineon IPP220N25NFDAKSA1
Brand: Infineon
SKU: IPP220N25NFDAKSA1

N-Channel 250 V 61 A 300 W SMT OptiMOSTMFD Power-Transistor - PG-TO220-3

$ 2.805

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min
Rutronik		TMOSP12804	500	500				3.640	3.080	13h
Rochester Electronics		IPP220N25NFDAKSA1	19,000				2.280	2.040	1.920	6h
Arrow Electronics	2	IPP220N25NFDAKSA1	1,435	1	5.433	4.693	2.757	2.550	2.550
Avnet	2	IPP220N25NFDAKSA1	0	500						8h
Farnell		IPP220N25NFDAKSA1	0	1	4.937*	4.076*	2.731*	2.623*	2.623*	6h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP220N25NFDAKSA1.

IHS

Datasheet12 pages0 years ago

Inventory History

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+0.00%

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Alternate Parts

This Part

Alternate Parts

InfineonIPP220N25NFDAKSA1

InfineonIPP200N25N3GXKSA1

Price @ 1000

$ 2.805

$ 3.04

Stock

513,257

212,782

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220

Drain to Source Voltage (Vdss)

250 V

Continuous Drain Current (ID)

61 A

64 A

Threshold Voltage

Rds On Max

22 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

5.32 nF

5.34 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2014-02-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-05-31

LTD Date2025-11-30

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Descriptions

Descriptions of Infineon IPP220N25NFDAKSA1 provided by its distributors.

N-Channel 250 V 61 A 300 W SMT OptiMOSTMFD Power-Transistor - PG-TO220-3

Future Electronics

Power Field-Effect Transistor, 61A I(D), 250V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

OptiMOS™ Fast Diode (FD) 200V, 250V and 300V is optimized for body diode hard commutation. These devices are the perfect choice for hard switching applications such as telecom, industrial power supplies, Class D audio amplifiers, motor control and DC-AC inverter.

Infineon

MOSFET, N-CH, 250V, 61A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 61A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.019ohm; Rds(on) Test Voltage V; Available until stocks are exhausted

Farnell

Mosfet, N-Ch, 250V, 61A, 175Deg C, 300W; Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:61A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V; Msl:- Rohs Compliant: Yes |Infineon IPP220N25NFDAKSA1

Newark

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 61 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 20 / Fall Time ns = 8 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 26 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 300

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