Infineon IPP12CN10LGXKSA1

Name: Infineon IPP12CN10LGXKSA1
Brand: Infineon
SKU: IPP12CN10LGXKSA1

125W 20V 1.2V 58NC@ 10V 1N 100V 12M¦¸@ 10V 69A 4.21NF@ 50V TO-220 10MM*4.4MM*15.65MM

$ 0.712

Obsolete

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IPP12CN10LGXKSA1	262	1		0.693	0.693	0.693	0.693	0.693
Rochester Electronics		IPP12CN10LGXKSA1	83,740					0.881	0.731	0.652	1d
Avnet		IPP12CN10LGXKSA1	0	500							5d
Farnell	2	IPP12CN10LGXKSA1	0	1		2.939*	1.852*	1.396*	1.396*	1.396*	4h
Microchip USA		IPP12CN10LGXKSA1	245	3K	Tube					0.880	7d

Inventory History

3 month trend: +11.76%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPP12CN10LGXKSA1.

Farnell

Datasheet10 pages14 years ago

Factory Futures

iiiC

Inventory History

3 month trend:

+11.76%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2007-10-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

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Descriptions

Descriptions of Infineon IPP12CN10LGXKSA1 provided by its distributors.

125W 20V 1.2V 58nC@ 10V 1N 100V 12m¦¸@ 10V 69A 4.21nF@ 50V TO-220 10mm*4.4mm*15.65mm

Unikeyic (ICkey)

Trans MOSFET N-CH 100V 69A 3-Pin(3+Tab) TO-220

Verical

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).

Infineon

MOSFET, N CH, 69A, 100V, PG-TO220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:69A; Drain Source Voltage Vds:100V; On Resistance Rds(on):9.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.84V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:69A; Power Dissipation Pd:125W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 69 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 5 / Rise Time ns = 9 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220-3 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 125

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