Infineon IPP086N10N3GXKSA1
$ 0.965
Production
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Inventory History
3 month trend: -10.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPP086N10N3GXKSA1.
CAD Models
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Supply Chain
Country of OriginMainland China, Malaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-17
Lifecycle StatusProduction (Last Updated: 1 month ago)
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Descriptions
Descriptions of Infineon IPP086N10N3GXKSA1 provided by its distributors.
Trans MOSFET N-CH 100V 80A Automotive 3-Pin(3+Tab) TO-220 Tube
Power MOSFET, N Channel, 100 V, 80 A, 0.0074 ohm, TO-220, Through Hole
Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on) and FOM (figure of merit).
Mosfet, N-Ch, 100V, 80A, To-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0074Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.7V; Power Rohs Compliant: Yes |Infineon Technologies IPP086N10N3GXKSA1
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: -10.96%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance8.6 mΩ
Drain to Source Voltage (Vdss)100 V
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.99 nF
Max Dual Supply Voltage100 V
Max Operating Temperature175 °C
Max Power Dissipation125 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance8.6 mΩ
Package Quantity500
Power Dissipation125 W
Rds On Max8.6 mΩ
Rise Time42 ns
Schedule B8541290080
Turn-Off Delay Time31 ns
Turn-On Delay Time18 ns
Datasheets & Documents
Download datasheets and manufacturer documentation for Infineon IPP086N10N3GXKSA1.
Compliance
Environmental Classification
China RoHSCompliant
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements