STMicroelectronics STP120NF10
$ 1.28
Production
Inventory History
3 month trend: -7.07%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Descriptions
Descriptions of STMicroelectronics STP120NF10 provided by its distributors.
N-channel 100 V, 0.009 Ohm, 110 A, STripFET(TM) II Power MOSFET in TO-220 package
STP120NF10 N-CHANNEL MOSFET TRANSISTOR, 120 A, 100 V, 3-PIN TO-220
Trans MOSFET N-CH 100V 110A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube STripFET IIseries, Vds=100 V, 120 A, TO-220encapsulation, Through hole mounting, 3Pin
MOSFET, N; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.009ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 312W
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: -7.07%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)110 A
Current Rating120 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance10.5 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time68 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.2 nF
Max Operating Temperature175 °C
Max Power Dissipation312 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation312 W
Rds On Max10.5 mΩ
Resistance10.5 mΩ
Rise Time90 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time132 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)100 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant