Infineon IPD60R1K5CEAUMA1

Name: Infineon IPD60R1K5CEAUMA1
Brand: Infineon
SKU: IPD60R1K5CEAUMA1

Trans MOSFET N-CH 600V 5A 3-Pin(2+Tab) DPAK T/R, PG-TO252-3, RoHS

$ 0.271

NRND

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
Newark		IPD60R1K5CEAUMA1	1,597	1	Cut Tape	1.020	0.666	0.460	0.343	0.343
Arrow Electronics		IPD60R1K5CEAUMA1	1,500	1		0.219	0.219	0.219	0.219	0.219
Rochester Electronics		IPD60R1K5CEAUMA1	1,583					0.236	0.196	0.175	21h
DigiKey	3	IPD60R1K5CEAUMA1CT-ND	39,570	1	Cut Tape	0.970	0.602	0.391	0.271	0.271
Future Electronics	2	IPD60R1K5CEAUMA1	0	2500	Tape & Reel					0.182

Inventory History

3 month trend: -6.78%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD60R1K5CEAUMA1.

IHS

Datasheet14 pages0 years ago

Infineon

Inventory History

3 month trend:

-6.78%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIPD60R1K5CEAUMA1

InfineonIPD60R1K5CEATMA1

Price @ 1000

$ 0.271

$ 0.281

Stock

690,508

71,605

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252-3

Drain to Source Voltage (Vdss)

600 V

650 V

Continuous Drain Current (ID)

5 A

Threshold Voltage

Rds On Max

1.5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

28 W

49 W

Input Capacitance

200 pF

Supply Chain

Country of OriginGermany, Mainland China, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-09-25

Lifecycle StatusNRND (Last Updated: 2 weeks ago)

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Descriptions

Descriptions of Infineon IPD60R1K5CEAUMA1 provided by its distributors.

Trans MOSFET N-CH 600V 5A 3-Pin(2+Tab) DPAK T/R, PG-TO252-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

Mosfet, N-Ch, 600V, 5A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IPD60R1K5CEAUMA1

Newark

Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

Infineon