STMicroelectronics STN1NK60Z
$ 0.325
Production
Inventory History
3 month trend: +420%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
InfineonBSP125 L6327
MOSFET, N-CH, 600V, 120MA, SOT-223; Transistor Polarity:N Channel; Continuous Dr
Descriptions
Descriptions of STMicroelectronics STN1NK60Z provided by its distributors.
N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH Power MOSFET in SOT-223 package
STN1NK60Z N-CHANNEL MOSFET TRANSISTOR, 0.3 A, 600 V, 3 + TAB-PIN SOT-223
Power MOSFET, N Channel, 600 V, 300 mA, 15 Ohm, SOT-223, 4 Pins, Surface Mount
Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R
N-CHANNEL 600V-13 OHM-0.25A-SOT-223 ZENER-PROTECTED SUPERMESH POWER MOSFET Small Signal Field-Effect Transistor, 0.25A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N Ch Mosfet, 600V, 300Ma, Sot-223, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:300Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:2W Rohs Compliant: Yes |Stmicroelectronics STN1NK60Z.
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 15 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +420%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Weight4.535924 g
Technical
Continuous Drain Current (ID)250 mA
Current Rating250 mA
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance15 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance94 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation3.3 W
Rds On Max15 Ω
Resistance15 Ω
Rise Time5 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time13 ns
Turn-On Delay Time5.5 ns
Voltage Rating (DC)600 V
Dimensions
Height1.9 mm
Length6.5 mm
Width3.5 mm
Compliance
Environmental Classification
China RoHSNon-Compliant
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant