Infineon IPD530N15N3GATMA1

Name: Infineon IPD530N15N3GATMA1
Brand: Infineon
SKU: IPD530N15N3GATMA1

OptiMOS3 Power-Transistor / Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) DPAK T/R

$ 0.634

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet	2	79X1437	374	1		1.950	1.230	0.857	0.680	0.680	16h
Newark	2	IPD530N15N3GATMA1	1,312	1	Cut Tape	1.950	1.230	0.857	0.768	0.768
Arrow Electronics	3	IPD530N15N3GATMA1	2,219	1		0.510	0.510	0.510	0.510	0.510
Rochester Electronics		IPD530N15N3GATMA1	51,431					0.681	0.565	0.504	14h
DigiKey	3	IPD530N15N3GATMA1CT-ND	3,416	1	Cut Tape	2.070	1.319	0.890	0.646	0.646

Inventory History

3 month trend: -4.44%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPD530N15N3GATMA1.

IHS

Datasheet12 pages12 years ago

Newark

_legacy Avnet

iiiC

Inventory History

3 month trend:

-4.44%

CAD Models

Download Infineon IPD530N15N3GATMA1 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download
EE Concierge	SymbolFootprint
SnapEDA	Footprint		Download
Ultra Librarian	SymbolFootprint		Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginGermany, Malaysia, South Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-01-25

Lifecycle StatusProduction (Last Updated: 1 week ago)

LTB Date2016-04-30

LTD Date2016-10-31

Related Parts

InfineonIRFR24N15DTRPBF

Single N-Channel 150 V 95 mOhm 45 nC HEXFET® Power Mosfet - TO-252-3

Details

InfineonIRFR24N15DPBF

Single N-Channel 150 V 95 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA

Details

InfineonIRFR18N15DTRPBF

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W

Details

onsemiFDD2582

N-Channel PowerTrench® MOSFET 150V, 21A, 66mΩ

Details

onsemiFDD120AN15A0

N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ

Details

onsemiFDD120AN15A0-F085

N-Channel Power Trench® MOSFET, 150V, 14A, 120mΩ

Details

Descriptions

Descriptions of Infineon IPD530N15N3GATMA1 provided by its distributors.

OptiMOS3 Power-Transistor / Trans MOSFET N-CH 150V 21A Automotive 3-Pin(2+Tab) DPAK T/R

Win Source

68W 20V 4V 8.7nC@ 10V 150V 53m¦¸@ 10V 667pF@ 75V TO-252 2.41mm

UnikeyIC

Infineon MOSFET IPD530N15N3GATMA1

RS APAC

Power Field-Effect Transistor, 21A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

Semicontronic

MOSFETs; IPD530N15N3 G; INFINEON TECHNOLOGIES

Maritex

The 150 V OptiMOS™ achieves a reduction in RDS(on) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor.This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Infineon