Infineon IRFR24N15DPBF

Name: Infineon IRFR24N15DPBF
Brand: Infineon
SKU: IRFR24N15DPBF

Single N-Channel 150 V 95 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA

$ 1.86

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRFR24N15DPBF	0	900	Bulk				1.860	1.860	14h
Farnell	IRFR24N15DPBF	0	1		1.911*	1.507*	1.095*	0.678*	0.662*	1d
Win Source	WS-IRFR24N15DPBF	28,160	115					0.404	0.404	1h
Worldway Electronics	IRFR24N15DPBF	8,721	7	Tube		0.426	0.418	0.402	0.394	1d
Fly-Wing Technology	IRFR24N15DPBF	148,835			0.538	0.441	0.428	0.400	0.400	2d

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR24N15DPBF.

IHS

Datasheet11 pages15 years ago

Datasheet10 pages15 years ago

Newark

iiiC

DigiKey

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2004-06-07

Lifecycle StatusObsolete (Last Updated: 4 months ago)

Related Parts

InfineonIRFR18N15DPBF

Single N-Channel 150 V 0.125 Ohm 28 nC HEXFET® Power Mosfet - TO-252AA

Details

InfineonIRFR18N15DTRPBF

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.125Ohm;ID 18A;D-Pak (TO-252AA);PD 110W

Details

onsemiFDD2572

N-Channel Power Trench® MOSFET, 150V, 29A, 54mΩ

Details

onsemiFDD120AN15A0

N-Channel PowerTrench® MOSFET, 150V, 14A, 120mΩ

Details

InfineonIRFR4615TRLPBF

N CH POWER MOSFET, HEXFET, 150V, 33A, DPAK; Transistor Polarity:N Channel; Conti

Details

onsemiFDD2572-F085

N-Channel PowerTrench® MOSFET, 150V, 29A, 54mΩ

Details

Descriptions

Descriptions of Infineon IRFR24N15DPBF provided by its distributors.

Single N-Channel 150 V 95 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design

Infineon

MOSFET, N, 150V, 24A, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:150V; On Resistance Rds(on):95mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:140W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:24A; Junction to Case Thermal Resistance A:1.1°C/W; On State resistance @ Vgs = 10V:95ohm; Package / Case:DPAK; Power Dissipation Pd:140W; Power Dissipation Pd:140W; Pulse Current Idm:96A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC