Infineon IPB120N10S403ATMA1

Name: Infineon IPB120N10S403ATMA1
Brand: Infineon
SKU: IPB120N10S403ATMA1

100V, N-Ch, 3.5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

$ 2.048

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Distributor		SKU		Min	Pkg
Newark		IPB120N10S403ATMA1	1,099	1	Cut Tape	5.620	3.950	3.000	2.650	2.650
Rochester Electronics		IPB120N10S403ATMA1	1,698					1.750	1.560	1.470	12h
DigiKey	3	448-IPB120N10S403ATMA1CT-ND	1,149	1	Cut Tape	6.030	3.994	2.840	2.347	2.347
Avnet		IPB120N10S403ATMA1	0	1K					1.993	1.788	15h
Arrow Electronics		IPB120N10S403ATMA1	0	1K					2.095	1.972

Inventory History

3 month trend: +452%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPB120N10S403ATMA1.

IHS

Datasheet9 pages3 years ago

Datasheet9 pages11 years ago

Inventory History

3 month trend:

+452%

CAD Models

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Supply Chain

Country of OriginGermany, Malaysia

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-06-30

Lifecycle StatusProduction (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPB120N10S403ATMA1 provided by its distributors.

100V, N-Ch, 3.5 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS

Infineon SCT

Mosfet, N-Ch, 100V, 120A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB120N10S403ATMA1

Newark

Trans MOSFET N-CH 100V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

Verical

Power MOSFET, N Channel, 100 V, 120 A, 0.003 ohm, TO-263, Surface Mount

Avnet

Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

Summary of Features: N-channel - Normal Level - Enhancement mode; AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested

Infineon