Infineon IPB027N10N5ATMA1

Name: Infineon IPB027N10N5ATMA1
Brand: Infineon
SKU: IPB027N10N5ATMA1

Mosfet, N-Ch, 100V, 166A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB027N10N5ATMA1

$ 2.128

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Distributor		SKU		Min	Pkg
Avnet	2	IPB027N10N5ATMA1	26,000	1K					2.128	2.027	2d
Newark	2	IPB027N10N5ATMA1	596	1	Cut Tape	1.950	1.950	1.950	1.950	1.950
Future Electronics	2	IPB027N10N5ATMA1	1,000	1K	Tape & Reel				3.070	3.030
Arrow Electronics		IPB027N10N5ATMA1	1,765	1		5.181	3.647	2.668	2.179	2.179
DigiKey	3	IPB027N10N5ATMA1CT-ND	2,468	1	Cut Tape	5.650	3.759	2.687	2.410	2.410

Inventory History

3 month trend: -16.59%

CAD Models

Download symbol, footprint, and 3D STEP

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Datasheets & Documents

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IHS

Datasheet11 pages0 years ago

TME

Inventory History

3 month trend:

-16.59%

CAD Models

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Supply Chain

Country of OriginAustria, Germany, Malaysia, Mexico

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-12-17

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

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Descriptions

Descriptions of Infineon IPB027N10N5ATMA1 provided by its distributors.

Mosfet, N-Ch, 100V, 166A, To-263 Rohs Compliant: Yes |Infineon Technologies IPB027N10N5ATMA1

Newark

Trans MOSFET N-CH 100V 166A Automotive 3-Pin(2+Tab) D2PAK T/R

Verical

OptiMOS™ 5 100V power MOSFET in D2PAK package with 22% lower RDS(on) for telecom and server power supply applications, PG-TO263-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 120A I(D), 100V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 100V, 166A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:166A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; P

element14 APAC

OptiMOS™ 5 100V power MOSFET IPB027N10N5 from Infineon is especially designed for synchronous rectification in telecom blocks including Or-ing, hotswap and battery protection as well as for server power supply applications. The device has a lower RDS(on) of 22% compared to similar devices , one of the biggest contributors to this industry leading FOM is the low on-state resistance providing the highest level of power density and efficiency.

Infineon