Infineon IPA90R500C3XKSA2

Name: Infineon IPA90R500C3XKSA2
Brand: Infineon
SKU: IPA90R500C3XKSA2

Power Transistor MOSFET N-Channel Enhancement 900V 11A 3-Pin TO-220FP

$ 1.58

NRND

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
DigiKey		448-IPA90R500C3XKSA2-ND	586	1	Tube	5.070	5.070	2.343	1.786	1.549
Arrow Electronics		IPA90R500C3XKSA2	450	1		2.038	2.038	1.849	1.849	1.849
Future Electronics	2	IPA90R500C3XKSA2	0	50	Tube			1.460	1.420	1.390
Avnet		IPA90R500C3XKSA2	0	500					1.385	1.315	12h
Component Stockers USA		IPA90R500C3XKSA2	1,324			2.860	1.750	1.680	1.680	1.680	>1wk

Inventory History

3 month trend: Restocked

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPA90R500C3XKSA2.

IHS

Datasheet10 pages17 years ago

Farnell

Inventory History

3 month trend:

Restocked

CAD Models

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Supply Chain

Country of OriginGermany, Mainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2008-07-29

Lifecycle StatusNRND (Last Updated: 1 month ago)

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Descriptions

Descriptions of Infineon IPA90R500C3XKSA2 provided by its distributors.

Power Transistor MOSFET N-Channel Enhancement 900V 11A 3-Pin TO-220FP

Avnet

Trans MOSFET N-CH 900V 11A 3-Pin(3+Tab) TO-220FP Tube

Verical

N-Channel 800 V 4 A 24 W 1.4 Ohm Through Hole Mosfet - PG-TO-220-3

Future Electronics

Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:34W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:11A; Package / Case:TO-220; Power Dissipation Pd:34W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

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