Infineon IPA90R1K2C3XKSA2

Name: Infineon IPA90R1K2C3XKSA2
Brand: Infineon
SKU: IPA90R1K2C3XKSA2

Power Transistor MOSFET N-Channel Enhancement 900V 5.1A 3-Pin TO-220FP

$ 0.857

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		IPA90R1K2C3XKSA2	20,625					1.030	0.855	0.762	20h
Mouser		726-IPA90R1K2C3XKSA2	422	1	Tube	2.630	1.690	1.150	0.859	0.777
Microchip USA		IPA90R1K2C3XKSA2	2,810	3K	Tube					0.721	18h
Win Source		WS-IPA90R1K2C3	13,700	35				1.437	1.194	1.194	21h
Worldway Electronics	2	IPA90R1K2C3	10,886	7			0.908	0.891	0.857	0.840	20h

Inventory History

3 month trend: +0.00%

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IPA90R1K2C3XKSA2.

IHS

Datasheet10 pages17 years ago

Farnell

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+0.00%

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-07-29

Lifecycle StatusObsolete (Last Updated: 5 months ago)

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Descriptions

Descriptions of Infineon IPA90R1K2C3XKSA2 provided by its distributors.

Power Transistor MOSFET N-Channel Enhancement 900V 5.1A 3-Pin TO-220FP

Avnet

Trans MOSFET N-CH 900V 5.1A Automotive 3-Pin(3+Tab) TO-220FP Tube

Verical

Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.8pF 50volts C0G +/-0.25pF

Utmel Electronic

Power Field-Effect Transistor, 3.1A I(D), 900V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:5.1A; Drain Source Voltage Vds:900V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:31W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:5.1A; Package / Case:TO-220; Power Dissipation Pd:31W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC