Infineon FM24V10-G

Ferroelectric RAM (FRAM), 1 Mbit (128K x 8) I2C, 3.4 MHz, 2 V to 3.6 V Supply, SOIC-8

FRAM 1Mbit Serial-I2C Interface 3.3V 8-Pin SOIC Tube

NVRAM FRAM Serial-2Wire 1M-Bit 3V/3.3V 8-Pin SOIC

Ferroelectric Ram, I2C, 1Mbit, Soic-8; Memory Configuration:128K X 8Bit; Interfaces:I2C; Clock Frequency Max:3.4Mhz; Supply Voltage Min:2V; Supply Voltage Max:3.6V; Ic Case/Package:Soic; No. Of Pins:8Pins; Ic Mounting:Surface Mountrohs Compliant: Yes |Cypress Infineon Technologies FM24V10-G

The FM24V10-G is a 1-Mbit nonvolatile memory utilizing advanced ferroelectric technology. As a ferroelectric random access memory (F-RAM), it provides reliable data retention for 151 years and eliminates complexities associated with EEPROM and other nonvolatile memories. With write operations at bus speed and no write delays, it offers substantial write endurance and lower power consumption during writes compared to EEPROM. Capable of supporting 1014 read/write cycles, it is ideal for applications requiring frequent or rapid writes, such as data logging and industrial controls. The FM24V10-G enables more frequent data writing with less system overhead, making it a reliable choice for nonvolatile memory applications.