Infineon BSC057N03LSGATMA1

Name: Infineon BSC057N03LSGATMA1
Brand: Infineon
SKU: BSC057N03LSGATMA1

Trans Mosfet N-ch 30V 17A 8-PIN Tdson T/r

$ 0.407

Obsolete

Manufacturer Page Datasheet

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Distributor		SKU		Min	Pkg
Rochester Electronics		BSC057N03LSGATMA1	5,838					0.417	0.346	0.308	19h
Mouser		726-BSC057N03LSG	4,209	1	Tape & Reel	1.720	1.060	0.696	0.468	0.363
Farnell		BSC057N03LSGATMA1	0	1		1.138*	0.939*	0.598*	0.379*	0.357*	19h
Microchip USA		BSC057N03LSGATMA1	327	600					2.086	2.086	6d
Win Source	2	WS-BSC057N03LSGATMA1	1,490	120					0.359	0.322	20h

Inventory History

3 month trend: -35.24%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon BSC057N03LSGATMA1.

Newark

Datasheet10 pages13 years ago

_legacy Avnet

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Inventory History

3 month trend:

-35.24%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-03-05

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-09-30

LTD Date2025-03-31

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Descriptions

Descriptions of Infineon BSC057N03LSGATMA1 provided by its distributors.

Trans MOSFET N-CH 30V 17A 8-Pin TDSON T/R

Avnet

Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:71A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V Rohs Compliant: Yes

Newark

Ultra low gate and output charge, together with lowest on-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions in servers, datacom and telecom applications. OptiMOS™ 30V products are tailored to the needs of power management in notebook by improved EMI behavior, as well as increased battery life. Available in halfbridge configuration (power stage 5x6)

Infineon

MOSFET, N CH, 71A, 30V, PG-TDSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:45W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PG-TSDSON; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:71A; Power Dissipation Pd:45W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

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