Infineon IRF8736PBF
Obsolete
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Inventory History
3 month trend: +0.00%
CAD Models
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Alternate Parts
0 parts available
CAD Models
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Supply Chain
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-08-01
Lifecycle StatusObsolete (Last Updated: 7 months ago)
Related Parts
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF8113TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 4.7Milliohms;ID 17.2A;SO-8;PD 2.5W;VGS +/-2
Descriptions
Descriptions of Infineon IRF8736PBF provided by its distributors.
IRF8736PBF N-channel MOSFET Transistor,18 A, 30 V, 8-Pin SOIC
Single N-Channel 30 V 6.8 mOhm 26 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET N-CH 30V 18A 8-Pin SOIC Tube / MOSFET N-CH 30V 18A 8-SOIC
Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
Transistor; Transistor Type:MOSFET; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):4.8mohm; Package/Case:8-SOIC; Drain-Source Breakdown Voltage:30V; Total Gate Charge:17nC; No. of Pins:8 ;RoHS Compliant: Yes
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Inventory History
3 month trend: +0.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.8 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time7.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.315 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
On-State Resistance4.8 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max4.8 mΩ
Recovery Time24 ns
Resistance4.8 MΩ
Rise Time15 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time13 ns
Turn-On Delay Time12 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Environmental Classification
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance Statements