Infineon AUIRFR5305

Name: Infineon AUIRFR5305
Brand: Infineon
SKU: AUIRFR5305

Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

$ 1.517

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		AUIRFR5305	1,181	1		1.880	1.735	1.601	1.517	1.517
Rochester Electronics	2	AUIRFR5305	11,379					1.610	1.340	1.190	23h
RS (Formerly Allied Electronics)		AUIRFR5305	0	75	Bulk			3.950	3.950	3.950	1d
Farnell	2	AUIRFR5305.	0	1		2.720*	2.720*	1.662*	0.977*	0.977*	22h
Microchip USA		AUIRFR5305	196	600	Tray				2.696	2.696	5d

Inventory History

3 month trend: -2.48%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRFR5305.

IHS

Datasheet11 pages10 years ago

Upverter

Farnell

Inventory History

3 month trend:

-2.48%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRFR5305

InfineonIRFR5305TRPBF

Price @ 1000

$ 1.517

$ 0.576

Stock

197,814

4,321,660

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Drain to Source Voltage (Vdss)

-55 V

Continuous Drain Current (ID)

31 A

Threshold Voltage

-2 V

-4 V

Rds On Max

65 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

110 W

89 W

Input Capacitance

1.2 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-12-06

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-30

LTD Date2023-03-31

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Descriptions

Descriptions of Infineon AUIRFR5305 provided by its distributors.

Automotive Q101 -55V Single P-Channel HEXFET Power MOSFET in a D-Pak Package, DPAK-3, RoHS

Infineon SCT

Trans MOSFET P-CH 55V 31A Automotive 3-Pin(2+Tab) DPAK Tube

Verical

Single P-Channel 55 V 65 mOhm 63 nC Automotive HEXFET® Power Mosfet - DPAK

Future Electronics

Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Semicontronic

MOSFET,W DIODE,P CH,55V,31A,DPAK; Transistor Polarity:P Channel; Continuous Drain Current Id:-31A; Drain Source Voltage Vds:-55V; On Resistance Rds(on):0.065ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Voltage Vgs Max:-20V

element14 APAC

Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Infineon