Infineon IRFR5305PBF

Name: Infineon IRFR5305PBF
Brand: Infineon
SKU: IRFR5305PBF

Mosfet, Power; P-ch; Vdss -55V; Rds(on) 0.065 Ohm; Id -31A; D-pak (TO-252AA); Pd 110W

$ 0.639

Obsolete

Manufacturer Page Datasheet

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Distributor	SKU		Min	Pkg
Arrow Electronics	IRFR5305PBF	1	1		0.639	0.639	0.639	0.639	0.639
RS (Formerly Allied Electronics)	IRFR5305PBF	0	1125	Bulk					1.700	1d
Farnell	IRFR5305PBF	0	5			0.990*	0.537*	0.453*	0.443*	13h
Win Source	WS-IRFR5305PBF	74,400	190					0.225	0.208	14h
Worldway Electronics	IRFR5305PBF	18,345	7	Tube		0.208	0.198	0.198	0.198	13h

CAD Models

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Alternate Parts

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Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRFR5305PBF.

IHS

Datasheet12 pages21 years ago

Newark

TME

RS (Formerly Allied Electronics)

Jameco

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-07-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRFR5305PBF provided by its distributors.

MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;D-Pak (TO-252AA);PD 110W

RS (Formerly Allied Electronics)

Single P-Channel 55 V 0.065 Ohm 42 nC HEXFET® Power Mosfet - TO-252AA

Future Electronics

-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET

Infineon

MOSFET, P, -55V, -28A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:31A; Drain Source Voltage Vds:55V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:110W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-31A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1.4°C/W; Package / Case:DPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:110A; SMD Marking:IRFR5305; Termination Type:SMD; Voltage Vds:55V; Voltage Vds Typ:-55V; Voltage Vgs Max:-4V; Voltage Vgs Rds on Measurement:-10V

element14 APAC