Infineon AUIRF7343QTR

Name: Infineon AUIRF7343QTR
Brand: Infineon
SKU: AUIRF7343QTR

Trans MOSFET N/P-CH 55V 4.7A/3.4A Automotive 8-Pin SOIC T/R

$ 1.072

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		AUIRF7343QTR	18,802	1		0.792	0.792	0.792	0.792	0.792
RS (Formerly Allied Electronics)		AUIRF7343Q	0	125	Bulk				1.351	1.109	11h
Farnell	3	AUIRF7343QTR	12,370	1	Cut Tape	4.212*	2.609*	1.875*	1.183*	1.183*	18h
Verical		AUIRF7343QTR	18,802	2			0.792	0.792	0.792	0.792
Win Source		WS-AUIRF7343QTR	5,200	22				1.824	1.530	1.530	19h

Inventory History

3 month trend: +33.42%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF7343QTR.

ODG (Origin Data Global)

Datasheet11 pages10 years ago

Farnell

TME

Inventory History

3 month trend:

+33.42%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRF7343QTR

InfineonIRF7343TRPBF

Price @ 1000

$ 1.072

$ 0.501

Stock

588,088

3,718,963

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

4.7 A

Threshold Voltage

1 V

Rds On Max

50 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2 W

Input Capacitance

740 pF

Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-12-06

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2014-10-28

LTD Date2015-04-28

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Descriptions

Descriptions of Infineon AUIRF7343QTR provided by its distributors.

Trans MOSFET N/P-CH 55V 4.7A/3.4A Automotive 8-Pin SOIC T/R

Verical

TAPE AND REEL / Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a SO-8 Package

Newark

N-P Channel 55 V 3.8 mOhm Surface Mount HEXFET Power Mosfet - SOIC-8

Future Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET,NP CH,55V,4.7A,3.4A,SO8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 4.7A; Drain Source Voltage Vds: 55V; On Resistance Rds(on): 0.043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V;

Farnell

Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Port Injection; Solenoid Injection

Infineon