Infineon IRF7343TRPBF

Name: Infineon IRF7343TRPBF
Brand: Infineon
SKU: IRF7343TRPBF

Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8

$ 0.507

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Avnet	2	IRF7343TRPBF	25,000	4K						0.316	3d
Newark		IRF7343TRPBF	84,229	1		1.720	1.140	0.762	0.547	0.503
Future Electronics	2	IRF7343TRPBF	148,000	4K	Tape & Reel					0.405
Arrow Electronics	3	IRF7343TRPBF	16,171	1		1.325	0.943	0.671	0.463	0.380
Rutronik		TMOS1169	4,000	4K						0.322	1d

Inventory History

3 month trend: -0.02%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon IRF7343TRPBF.

SOS electronic

Datasheet10 pages21 years ago

IHS

_legacy Avnet

iiiC

Inventory History

3 month trend:

-0.02%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonIRF7343TRPBF

InfineonAUIRF7343QTR

Price @ 1000

$ 0.507

$ 1.276

Stock

3,575,491

510,727

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

4.7 A

Threshold Voltage

1 V

Rds On Max

50 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2 W

Input Capacitance

740 pF

Supply Chain

Country of OriginMainland China, Philippines, Thailand, Usa

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1997-10-29

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Infineon IRF7343TRPBF provided by its distributors.

Dual N/P-Channel 55 V 0.05/0.105 Ohm 24/26 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC N T/R

Verical

Dual MOSFET, Complementary N and P Channel, 55 V, 55 V, 4.7 A, 4.7 A, 0.043 ohm

Avnet

Transistor MOSFET N+P-Ch.4,7+3,4A/55V SO8 IRF 7343 TRPBF

Rapid Electronics

55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

Infineon SCT

HEXFET POWER MOSFET Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

MOSFET, NP CH, 55V, 3.4A, 8SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Farnell