Infineon AUIRF7103QTR

Name: Infineon AUIRF7103QTR
Brand: Infineon
SKU: AUIRF7103QTR

Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R

$ 0.738

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	AUIRF7103QTR	695	1		0.621	0.621	0.621	0.621	0.621
Rochester Electronics		AUIRF7103QTR	916,195					0.889	0.738	0.658	18h
RS (Formerly Allied Electronics)		AUIRF7103Q	0	125	Bulk				0.950	0.780	11h
Farnell	2	AUIRF7103QTR	14,419	5	Cut Tape		5.563*	3.695*	2.236*	2.195*	4h
Component Search		AUIRF7103QTR	8,000			0.400	0.400	0.390	0.390	0.560	19h

Inventory History

3 month trend: +1295%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF7103QTR.

Farnell

Datasheet11 pages10 years ago

Newark

TME

Inventory History

3 month trend:

+1295%

CAD Models

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRF7103QTR

InfineonIRF7103TRPBF

Price @ 1000

$ 0.738

$ 0.346

Stock

2,118,006

2,696,775

Authorized Distributors

Mount

Surface Mount

Case/Package

SOIC

Drain to Source Voltage (Vdss)

50 V

Continuous Drain Current (ID)

3 A

Threshold Voltage

1 V

3 V

Rds On Max

130 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

2.4 W

2 W

Input Capacitance

255 pF

290 pF

Supply Chain

Country of OriginMalaysia

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2011-03-09

Lifecycle StatusObsolete (Last Updated: 3 months ago)

LTB Date2023-03-31

LTD Date2023-09-30

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Descriptions

Descriptions of Infineon AUIRF7103QTR provided by its distributors.

Transistor MOSFET Array Dual N-CH 50V 3A 8-Pin SOIC T/R

Avnet Japan

Dual N-Channel 50 V 130 mOhm 10 nC Automotive HEXFET® Power Mosfet - SOIC-8

Future Electronics

Automotive Q101 50V Dual N-Channel HEXFET Power MOSFET in a SO-8 Package, SO8, RoHS

Infineon SCT

Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, NN CH, 50V, 3A, SO8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:50V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; Continuous Drain Current Id, N Channel:3A; Drain Source Voltage Vds, N Channel:50V; Module Configuration:Dual N Channel; On Resistance Rds(on), N Channel:0.13ohm; Power Dissipation Pd:2.4W

element14 APAC

Benefits: Advanced planar technology; Dynamic dV/dT rating; 175C operating temperature; Fast switching; Fully Avalanche Rated; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified | Target Applications: Port Injection; Solenoid Injection

Infineon