Infineon AUIRF1010ZS

Name: Infineon AUIRF1010ZS
Brand: Infineon
SKU: AUIRF1010ZS

Trans MOSFET N-CH 55V 94A Automotive 3-Pin(2+Tab) D2PAK Tube

$ 4.3

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	AUIRF1010ZS	0	2	Bulk		4.530	4.300	4.300	4.300	3h
Farnell	AUIRF1010ZS	0	1		3.484*	2.664*	1.964*	1.439*	1.439*	12h
Component Stockers USA	AUIRF1010ZS	16,525			0.910	0.900	0.870	0.840	0.840	>1wk
Win Source	WS-AUIRF1010ZS	20	45				1.346	0.897	0.897	12h
Worldway Electronics	AUIRF1010ZS	11,243	7	Tube		0.679	0.666	0.640	0.628	1d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Infineon AUIRF1010ZS.

Upverter

Datasheet13 pages8 years ago

Newark

IHS

element14 APAC

TME

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Alternate Parts

This Part

Alternate Parts

InfineonAUIRF1010ZS

InfineonAUIRF1010ZSTRL

Price @ 1000

$ 4.3

$ 2.406

Stock

61,383

41,704

Authorized Distributors

Mount

Surface Mount

Case/Package

D2PAK

Drain to Source Voltage (Vdss)

55 V

Continuous Drain Current (ID)

94 A

Threshold Voltage

2 V

Rds On Max

7.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

140 W

Input Capacitance

2.84 nF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2010-02-19

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2021-08-15

LTD Date2022-02-15

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Descriptions

Descriptions of Infineon AUIRF1010ZS provided by its distributors.

Trans MOSFET N-CH 55V 94A Automotive 3-Pin(2+Tab) D2PAK Tube

Verical

AUTOMOTIVE MOSFET 55V, 94A, 7.5 MOHM, 63 NC QG, D2PAK

RS (Formerly Allied Electronics)

Automotive Q101 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package

International Rectifier

HEXFET POWER MOSFET Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

ComSIT Distribution GmbH

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS

Infineon SCT

Mosfet, N Channel, 55V, 94A, D2Pak; Transistor Polarity:n Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:55V; On Resistance Rds(On):0.0058Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V Rohs Compliant: Yes

Newark

Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified

Infineon

MOSFET, N CH, 55V, 94A, D2PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:140W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:94A; Power Dissipation Pd:140W; Voltage Vgs Max:20V

element14 APAC