Diodes Inc. FZT857TA

Bipolar (BJT) Single Transistor, NPN, 300 V, 3.5 A, 3 W, SOT-223, Surface Mount
$ 0.447
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. FZT857TA.

IHS

Datasheet7 pages9 years ago
Datasheet3 pages0 years ago

RS (Formerly Allied Electronics)

Future Electronics

Farnell

Diodes Inc SCT

Inventory History

3 month trend:
+30.72%

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Alternate Parts

This Part
Alternate Parts
Price @ 1000
$ 0.447
$ 0.727
Stock
541,438
119,448
Authorized Distributors
6
3
Mount
Surface Mount
-
Case/Package
SOT-223-4
SOT-223
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
300 V
300 V
Max Collector Current
3.5 A
3.5 A
Transition Frequency
80 MHz
80 MHz
Collector Emitter Saturation Voltage
345 mV
345 mV
hFE Min
100
100
Power Dissipation
3 W
3 W

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.75
Introduction Date1993-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. FZT857TA provided by its distributors.

Bipolar (BJT) Single Transistor, NPN, 300 V, 3.5 A, 3 W, SOT-223, Surface Mount
Trans GP BJT NPN 300V 3.5A 3000mW 4-Pin(3+Tab) SOT-223 T/R / TRANS NPN 300V 3.5A SOT-223
300V 3W 100@500mA,10V 3.5A NPN SOT-223 Bipolar Transistors - BJT ROHS
FZT857 Series NPN 3.5 A 300 V SMT Silicon High Performance Transistor - SOT-223
General Purpose Transistors NPN Ic=3.5A Vceo=300V hfe=100~300 P=3W SOT223
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR Power Bipolar Transistor, 3.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin
TRANSISTOR, NPN, REEL 1K; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:300V; Typ Gain Bandwidth ft:80MHz; Power Dissipation Pd:3W; DC Collector Current:3.5A; DC Current Gain hFE:200; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-223; Case Style:SOT-223; Current Ic Hfe NPN Device:0.5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Max Current Ic:3.5A; Max Current Ic Continuous a:3.5A; Max Power Dissipation Ptot:3W; Max Voltage Vce Sat:100mV; Min Hfe:100; No. of Transistors:1; Power Dissipation:3W; Pulsed Current Icm:5A; Reel Quantity:1000; SMD Marking:FZT857; Tape Width:12mm; Termination Type:SMD; Transistor Type:Bipolar; Voltage Vcbo:350V

Manufacturer Aliases

Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:

  • Diodes Incorporated
  • DIODE
  • DII
  • DIO
  • DIODE INC
  • DC COMPONENTS
  • DIOD
  • YENYO
  • Diodes Zetex
  • MICRO COM
  • MICRO ELECTRONIC INS
  • Diodes Inc / Zetex
  • DIODE INCORPORATED
  • DIODES ZET
  • DIODSE
  • DINC
  • Diodes Inc Inc
  • DIOINC
  • FORMOSA MS
  • DIODES INC(RoHS)
  • ZETEX (DIODES INC)
  • DIODES INC/VISHAY
  • Diodes Incorporation
  • ZETEXDIODES
  • DIODES INC/VISH
  • Pericom
  • Diodes Incorporated

Part Number Aliases

This part may be known by these alternate part numbers:

  • FZT857-TA