Diodes Inc. FZT849

Name: Diodes Inc. FZT849
Brand: Diodes Inc.
SKU: FZT849

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

$ 0.666

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Newark	2	FZT849	751	1	Cut Tape	1.310	1.150	0.967	0.967	0.967
element14 APAC	2	FZT849	751	1	Cut Tape	1.751*	1.141*	0.780*	0.518*	0.518*	10h
Farnell	4	FZT849	751	1	Cut Tape	1.758*	1.097*	0.734*	0.518*	0.518*	17h
Win Source		WS-FZT849	36,000	95				0.623	0.415	0.415	19h
UnikeyIC		FZT849	810	18				0.840	0.563	0.563	1h

Inventory History

3 month trend: -19.03%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. FZT849.

Upverter

Datasheet7 pages9 years ago

Newark

IHS

Farnell

Inventory History

3 month trend:

-19.03%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.FZT849

Diodes Inc.FZT849TA

Price @ 1000

$ 0.666

$ 0.482

Stock

47,581

669,313

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-223

Polarity

NPN

Collector Emitter Breakdown Voltage

30 V

120 V

Max Collector Current

7 A

Transition Frequency

100 MHz

Collector Emitter Saturation Voltage

350 mV

hFE Min

100

Power Dissipation

3 W

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.75

Introduction Date1996-06-01

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. FZT849 provided by its distributors.

Power Bipolar Transistor, 7A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin

IHS

Trans GP BJT NPN 30V 7A 4-Pin(3+Tab) SOT-223

Verical

NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR

Win Source

TRANSISTOR, NPN SOT-223; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: 100MHz; Power Dissipation Pd: 3W; DC Collector Current: 7A; DC Current Gain hFE: 100hFE; Transistor Case Styl

Farnell

; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:30V; Continuous Collector Current, Ic:7A; Collector Emitter Saturation Voltage, Vce(sat):50mV; Power Dissipation, Pd:3W; DC Current Gain Min (hfe):100 ;RoHS Compliant: Yes

Newark