Infineon IRLML5103GTRPBF
Obsolete
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 70019843 | 0 | 50 | Bulk | 13h | ||||||||
| 161509-IRLML5103GTRPBF | 47,900 | 345 | 3d | |||||||||
| 14858452-IRLML5103GTRPBF | 52,870 | 10h | ||||||||||
| IRLML5103GTRPBF | 192,493 | 7 | Tape & Reel | 1d | ||||||||
| IRLML5103GTRPBF | 300,000 | >1wk |
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-760 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance75 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation540 mW
Manufacturer Package IdentifierMicro3
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance600 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation540 mW
Rds On Max600 mΩ
Rise Time8.2 ns
Schedule B8541210080
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.149
$ 0.103
Stock
646,791
5,780,590
Authorized Distributors
1
17
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
-760 mA
760 mA
Threshold Voltage
-
-1 V
Rds On Max
600 mΩ
600 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
540 mW
540 mW
Input Capacitance
75 pF
75 pF
Engineering Resources
View Evaluation kits and Reference designs for Infineon IRLML5103GTRPBF.
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N CH POWER MOSFET, HEXFET, 30V, 1.2A, MICRO3; Transistor Polarity:N Channel; Con
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P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ
Descriptions
Descriptions of Infineon IRLML5103GTRPBF provided by its distributors.
-30V Single P-Channel Lead Free HEXFET Power MOSFET in a Halogen Free Micro3 package
Small Signal Field-Effect Transistor, 0.76A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, -30V, -0.76A, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -760mA; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V
Manufacturer Aliases
Infineon has several brands around the world that distributors may use as alternate names. Infineon may also be known as the following names:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEN
- INFINEON TECH
- IR/INFINEON
- IFX
- INFIENON
- IFT
- INFINEON/SIEMENS
- INFINEON/IR
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- LNFINEON
- INFINEON TECHNO
- Infineon Technologies Americas Corp
- INFINEON TECHNOLOGIES (ASIA
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-760 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance75 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation540 mW
Manufacturer Package IdentifierMicro3
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance600 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation540 mW
Rds On Max600 mΩ
Rise Time8.2 ns
Schedule B8541210080
Turn-Off Delay Time23 ns
Turn-On Delay Time10 ns
Dimensions
Height1.016 mm
Length3.0226 mm
Width1.397 mm