onsemi NDS352AP

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ
Production

Price and Stock

Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers

Technical Specifications

Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)900 mA
Current Rating-900 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance135 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max300 mΩ
Resistance500 mΩ
Rise Time16 ns
Schedule B8541210080
Threshold Voltage-1.7 V
Turn-Off Delay Time35 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.22 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi NDS352AP.

element14 APAC
Datasheet7 pages26 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet7 pages26 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
element14
Datasheet8 pages19 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Jameco
Datasheet9 pages15 years ago
Fairchild Semiconductor
Technical Drawing1 page20 years ago
iiiC
Datasheet7 pages26 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Inventory History

3 month trend:
-7.98%

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi NDS352AP.

Related Parts

Descriptions

Descriptions of onsemi NDS352AP provided by its distributors.

P-Channel Logic Level Enhancement Mode Field Effect Transistor -30V, -0.9A, 300mΩ
MOSFET P-CH 30V 0.9A SSOT3 / Trans MOSFET P-CH 30V 0.9A 3-Pin SOT-23 T/R
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:900mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.7V; Power Dissipation Pd:500mW; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:900mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:500mW; Power Dissipation Pd:500mW; Pulse Current Idm:10A; SMD Marking:NDS352P; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-30V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-10V; Voltage Vgs th Max:-2.5V
These P -Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast high-side switching, and low in-line power loss are needed in a very small outline surface mount package.

Manufacturer Aliases

onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:

  • ON Semiconductor
  • ONS
  • ONSEMICON
  • ON SEM
  • ON SEMICONDUCTO
  • ON SEMICONDUCTORS
  • ONSEMIC
  • ON Semicondu
  • OSC
  • ONSE
  • ON SEMICOND
  • ON Semiconductor / Fairchild
  • SCG
  • ON Semiconductor Cor
  • ON SEMICO
  • ONSM
  • MOT/ON SEMI
  • Fairchild/ONSemiconductor
  • ON SEMICONDUCTOR CORP
  • ON Semiconductor Corporation
  • ON4
  • onsemi / Fairchild
  • ON SEMICONDUCT
  • ON-SEMI SCG
  • ON SEMICONDUTOR
  • ON Semiconductor Inc.
  • onsemiconductor

Part Number Aliases

This part may be known by these alternate part numbers:

  • NDS 352 AP
  • NDS-352-AP
  • NDS352AP.

Technical Specifications

Physical
Case/PackageTO-236-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Weight30 mg
Technical
Continuous Drain Current (ID)900 mA
Current Rating-900 mA
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage-30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance135 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation460 mW
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max300 mΩ
Resistance500 mΩ
Rise Time16 ns
Schedule B8541210080
Threshold Voltage-1.7 V
Turn-Off Delay Time35 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.22 mm
Width3.05 mm

Documents

Download datasheets and manufacturer documentation for onsemi NDS352AP.

element14 APAC
Datasheet7 pages26 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago
Upverter
Datasheet7 pages26 years ago
Technical Drawing1 page4 years ago
onsemi
Datasheet0 pages0 years ago
element14
Datasheet8 pages19 years ago
Farnell
Datasheet0 pages0 years ago
Datasheet8 pages15 years ago
Jameco
Datasheet9 pages15 years ago
Fairchild Semiconductor
Technical Drawing1 page20 years ago
iiiC
Datasheet7 pages26 years ago
Newark
Datasheet0 pages0 years ago
Datasheet0 pages0 years ago

Compliance

Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements
Rohs Statement3 pages3 years ago
Reach Statement3 pages10 years ago
Materials Sheet3 pages10 years ago
Reach Statement3 pages9 years ago
Materials Sheet3 pages9 years ago
Reach Statement8 pages9 years ago
Reach Statement2 pages11 years ago
Rohs Statement1 page11 years ago
Rohs Statement1 page10 years ago