onsemi DTC124EET1G

Name: onsemi DTC124EET1G
Brand: onsemi
SKU: DTC124EET1G
Price: 0.021 USD
Availability: InStock

DTC124EET1G NPN Digital Transistor; 100mA 50 V 22 kOhm; Ratio Of 1; 3-Pin SC-75

Production

Manufacturer Page Datasheet

Price and Stock

Distributor		SKU		MOQ	Pkg
Future Electronics		3033204	18,000	3K	Tape & Reel					0.020	21h
Flip Electronics (Authorized)		DTC124EET1G	308,970			0.010	0.010	0.010	0.010	0.010	>1wk
Rochester Electronics		DTC124EET1G	267,316			0.026	0.026	0.025	0.022	0.022	1d
Avnet	2	DTC124EET1G	308,970	50K							1d
Arrow Electronics	3	DTC124EET1G	45,000	1		0.185	0.126	0.055	0.033	0.020	1d

Technical Specifications

Physical

Case/PackageSOT-416

Contact PlatingTin

Number of Pins3

Technical

Collector Emitter Breakdown Voltage50 V

Collector Emitter Saturation Voltage250 mV

Collector Emitter Voltage (VCEO)50 V

Continuous Collector Current100 mA

Current Rating100 mA

Element ConfigurationSingle

Emitter Base Voltage (VEBO)6 V

hFE Min60

Max Breakdown Voltage50 V

Max Collector Current100 mA

Max Operating Temperature150 °C

Max Output Current100 mA

Max Power Dissipation200 mW

Min Operating Temperature-55 °C

Operating Supply Voltage50 V

PackagingDigi-Reel®

PolarityNPN

Power Dissipation200 mW

Schedule B8541210080

Voltage Rating (DC)50 V

Dimensions

Height800 µm

Length1.65 mm

Width900 µm

Inventory History

3 month trend: +3.13%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Documents

Download datasheets and manufacturer documentation for onsemi DTC124EET1G.

RS (Formerly Allied Electronics)

Datasheet12 pages11 years ago

Upverter

Datasheet12 pages7 years ago

Future Electronics

Datasheet11 pages18 years ago

Datasheet12 pages11 years ago

Arrow Electronics

Datasheet13 pages11 years ago

iiiC

Datasheet13 pages11 years ago

Inventory History

3 month trend:

+3.13%

Alternate Parts

This Part

Alternate Parts

onsemiDTC124EET1G

onsemiDTC124EET1

Price @ 1000

$ 0.031

$ 0.022

Stock

2,355,537

439,206

Authorized Distributors

Mount

Case/Package

SOT-416

Polarity

NPN

Collector Emitter Breakdown Voltage

50 V

Max Collector Current

100 mA

Transition Frequency

Collector Emitter Saturation Voltage

250 mV

hFE Min

Power Dissipation

200 mW

Supply Chain

Lifecycle StatusProduction (Last Updated: 3 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)

Engineering Resources

View Evaluation kits and Reference designs for onsemi DTC124EET1G.

Related Parts

Descriptions

Descriptions of onsemi DTC124EET1G provided by its distributors.

DTC124EET1G NPN Digital Transistor; 100mA 50 V 22 kOhm; Ratio Of 1; 3-Pin SC-75

ASIA Components

Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-416 T/R

Chip One Stop

DTC Series 50 V 100 mA 22 kOhm NPN Silicon Bias Resistor Transistor - SC-75

Future Electronics

NPN Bipolar Digital Transistor (BRT)

onsemi

BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;

Farnell

DIGITAL TRANSISTOR (BRT) R1 = 22 KILO OHM, R2 = 22 KILO OHM Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon

ComSIT Distribution GmbH

Brt Transistor, 50V, 22K/22Kohm, Sc75, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:22Kohm Rohs Compliant: Yes |Onsemi DTC124EET1G

Newark

NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.

North Star Micro