onsemi DTC115EET1G
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DTC115EET1G | 3,321,293 | 1d | ||||||||||
| 49X8799 | 1,700 | 1 | 17h | |||||||||
| DTC115EET1G | 21,000 | 3K | 1d | |||||||||
| DTC115EET1G | 43,408 | 1 | Cut Tape | 1d | ||||||||
| 488-DTC115EET1GCT-ND | 7,678 | 1 | Cut Tape | 1d |
Technical Specifications
Physical
Case/PackageSOT-416
Contact PlatingTin
Number of Pins3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height800 µm
Length1.65 mm
Width900 µm
Inventory History
3 month trend: +2.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.025
$ 0.074
Stock
7,432,345
951,652
Authorized Distributors
11
10
Mount
-
Surface Mount
Case/Package
SOT-416
SOT-416
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
50 V
50 V
Max Collector Current
100 mA
20 mA
Transition Frequency
-
250 MHz
Collector Emitter Saturation Voltage
250 mV
-
hFE Min
80
82
Power Dissipation
200 mW
150 mW
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi DTC115EET1G.
Related Parts
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onsemiDTC124EET1G
DTC124EET1G NPN Digital Transistor; 100mA 50 V 22 kOhm; Ratio Of 1; 3-Pin SC-75
Descriptions
Descriptions of onsemi DTC115EET1G provided by its distributors.
Trans Digital BJT NPN 50V 100mA Automotive 3-Pin SOT-416 T/R
NPN Bipolar Digital Transistor (BRT)
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
Transistor, NPN, 50V, 0.1A, SC-75; Digital Transistor Polarity:Single NPN; Collector Emitter Voltage V(br)ceo:50V; Continuous Current
Brt Transistor, 50V, 100K/100Kohm, Sc75, Full Reel; Transistor Polarity:Single Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:100Kohm Rohs Compliant: Yes |Onsemi DTC115EET1G
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-75/SOT-416 package which is designed for low power surface mount applications.
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +2.43%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-416
Contact PlatingTin
Number of Pins3
Technical
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage250 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Current Rating100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-55 °C
PackagingCut Tape (CT)
PolarityNPN
Power Dissipation200 mW
Schedule B8541210080
Voltage Rating (DC)50 V
Dimensions
Height800 µm
Length1.65 mm
Width900 µm
Compliance
Environmental Classification
Halogen FreeHalogen Free
Lead FreeLead Free
Radiation HardeningNo
RoHSCompliant
Compliance Statements