Diodes Inc. DMMT3906W-7-F
Technical Specifications
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-40 V
Continuous Collector Current-200 mA
Current Rating-200 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current-200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityPNP
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Inventory History
3 month trend: -17.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. DMMT3906W-7-F.
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Descriptions
Descriptions of Diodes Inc. DMMT3906W-7-F provided by its distributors.
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon
DIODES INC. - DMMT3906W-7-F - Bipolar Transistor Array, Dual, PNP, -40 V, 200 mW, -200 mA, 100 hFE, SOT-363
General Purpose Transistor Sot363 T&r 3K Rohs Compliant: Yes |Diodes Inc. DMMT3906W-7-F
Trans GP BJT PNP 40V 0.2A 6Pin SOT363 | Diodes Inc DMMT3906W-7-F
Transistor, MATCHED PNP/PNP, SOT363; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-40V; Power Dissipation Pd:200mW; DC
TRANSISTOR, MATCHED PNP/PNP, SOT363; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -40V; Power Dissipation Pd: 200mW; DC Collector Current: -200mA; DC Current Gain hFE: 100hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): -400mV; Current Ic Continuous a Max: -200mA; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: Small Signal; Transition Frequency ft: 250MHz
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: -17.05%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-363
MountSurface Mount
Number of Pins6
Weight6.010099 mg
Technical
Collector Base Voltage (VCBO)-40 V
Collector Emitter Breakdown Voltage-40 V
Collector Emitter Saturation Voltage-400 mV
Collector Emitter Voltage (VCEO)-40 V
Continuous Collector Current-200 mA
Current Rating-200 mA
Element ConfigurationDual
Emitter Base Voltage (VEBO)-5 V
Frequency250 MHz
Gain Bandwidth Product250 MHz
hFE Min100
Max Breakdown Voltage40 V
Max Collector Current-200 mA
Max Frequency250 MHz
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation200 mW
Min Operating Temperature-65 °C
Number of Elements2
PackagingCut Tape
PolarityPNP
Power Dissipation200 mW
Schedule B8541210080
Transition Frequency250 MHz
Voltage Rating (DC)-40 V
Dimensions
Height1 mm
Length2.2 mm
Width1.35 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements