onsemi BSS84
Production
In StockTechnical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)130 mA
Current13 A
Current Rating-130 mA
Drain to Source Breakdown Voltage-50 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)-50 V
Dual Supply Voltage-50 V
Element ConfigurationSingle
Fall Time6.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance73 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max10 Ω
Resistance10 Ω
Rise Time6.3 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1.7 V
Turn-Off Delay Time10 ns
Turn-On Delay Time2.5 ns
Voltage50 V
Voltage Rating (DC)-50 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Documents
Download datasheets and manufacturer documentation for onsemi BSS84.
Arrow Electronics
Jameco
TME
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.125
$ 0.071
Stock
9,477,697
16,499,696
Authorized Distributors
11
10
Mount
Surface Mount
-
Case/Package
SOT-23
SOT-23
Drain to Source Voltage (Vdss)
-50 V
50 V
Continuous Drain Current (ID)
130 mA
130 mA
Threshold Voltage
-1.7 V
-2 V
Rds On Max
10 Ω
10 Ω
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
360 mW
225 mW
Input Capacitance
73 pF
30 pF
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi BSS84.
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Descriptions
Descriptions of onsemi BSS84 provided by its distributors.
Transistor, MOSFET, P-channel, small signal switch, 50V, 0.13A, SOT23 | ON Semiconductor BSS84
P-Channel 50 V 10 Ohm 225 mW Surface Mount Power MOSFET - SOT-23
P-Channel MOSFET, Enhancement Mode, -50V, -0.13A, 10Ω
Trans MOSFET P-CH 50V 0.13A 3-Pin SOT-23 T/R - Tape and Reel
P-CHANNEL SINGLE WITH BUILT-IN DIODE 3 EAR99 Mosfet Transistor 0.13A 0.25W 50V 10Ohm
Small Signal Field-Effect Transistor, 0.13A I(D), 50V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch.
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) mA = -130 / Drain-Source Voltage (Vds) V = -50 / ON Resistance (Rds(on)) Ohm = 10 / Gate-Source Voltage V = 20 / Fall Time ns = 9.6 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) mW = 360
MOSFET,P CH,50V,0.13A,SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:130mA; Drain Source Voltage Vds:50V; On Resistance Rds(on):10ohm; Rds(on) Test Voltage Vgs:-5V; Threshold Voltage Vgs Typ:-1.7V; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:130mA; Current Temperature:25°C; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:360mW; Power Dissipation Pd:360µW; Power Dissipation Ptot Max:360mW; Pulse Current Idm:520mA; SMD Marking:SP; Tape Width:8mm; Termination Type:SMD; Voltage Vds Typ:-50V; Voltage Vgs Max:-1.7V; Voltage Vgs Rds on Measurement:-5V; Voltage Vgs th Max:-2V
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
Inventory history trend unavailable
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)130 mA
Current13 A
Current Rating-130 mA
Drain to Source Breakdown Voltage-50 V
Drain to Source Resistance10 Ω
Drain to Source Voltage (Vdss)-50 V
Dual Supply Voltage-50 V
Element ConfigurationSingle
Fall Time6.3 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance73 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation360 mW
Min Operating Temperature-55 °C
Nominal Vgs-1.7 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation360 mW
Rds On Max10 Ω
Resistance10 Ω
Rise Time6.3 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage-1.7 V
Turn-Off Delay Time10 ns
Turn-On Delay Time2.5 ns
Voltage50 V
Voltage Rating (DC)-50 V
Dimensions
Height930 µm
Length2.92 mm
Width3.05 mm
Documents
Download datasheets and manufacturer documentation for onsemi BSS84.
Arrow Electronics
Jameco
TME
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements