onsemi TIP29AG
Production
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min40
Max Breakdown Voltage25 V
Max Collector Current1 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)60 V
Inventory History
3 month trend: +33.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 0.408
$ 0.314
Stock
303,134
208,283
Authorized Distributors
8
1
Mount
-
Through Hole
Case/Package
TO-220-3
TO-220
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
60 V
60 V
Max Collector Current
1 A
1 A
Transition Frequency
3 MHz
3 MHz
Collector Emitter Saturation Voltage
700 mV
700 mV
hFE Min
40
15
Power Dissipation
2 W
2 W
Supply Chain
Lifecycle StatusProduction (Last Updated: 3 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 3 years ago)
Engineering Resources
View Evaluation kits and Reference designs for onsemi TIP29AG.
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Descriptions
Descriptions of onsemi TIP29AG provided by its distributors.
TIP Series 60 V 1 A NPN Complementary Silicon Plastic Power Transistor TO-220AB
Power Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin
1.0 A, 60 V, NPN Power Bipolar Junction Transistor
Trans GP BJT NPN 60V 1A 2000mW 3-Pin(3+Tab) TO-220AB Tube
BIPOLAR Transistor, NPN, 60V TO-220; Tra
60V 30W 1A 15@1A4V 3MHz NPN 700mV@1A125mA -65¡Í~+150¡Í@(Tj) TO-220 Bipolar Transistors - BJT ROHS
1 A 60 V NPN Si POWER TRANSISTOR TO-220AB
Bipolar Transistor; Transistor Polarity:NPN; Collector Emitter Voltage, V(br)ceo:60V; Collector Emitter Saturation Voltage, Vce(sat):15V; Power Dissipation, Pd:30W; DC Current Gain Min (hfe):15; Package/Case:3-TO-220 ;RoHS Compliant: Yes
Manufacturer Aliases
onsemi has several brands around the world that distributors may use as alternate names. onsemi may also be known as the following names:
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON SEMICONDUCTOR CORP
- ON Semiconductor Corporation
- ON4
- onsemi / Fairchild
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
Inventory History
3 month trend: +33.61%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageTO-220-3
Contact PlatingTin
Number of Pins3
Technical
Collector Base Voltage (VCBO)60 V
Collector Emitter Breakdown Voltage60 V
Collector Emitter Saturation Voltage700 mV
Collector Emitter Voltage (VCEO)60 V
Current Rating1 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency3 MHz
Gain Bandwidth Product3 MHz
hFE Min40
Max Breakdown Voltage25 V
Max Collector Current1 A
Max Frequency3 MHz
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Operating Temperature-65 °C
Number of Elements1
PolarityNPN
Power Dissipation2 W
Schedule B8541290080
Transition Frequency3 MHz
Voltage Rating (DC)60 V
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements