Vishay SI7137DP-T1-GE3
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI7137DP-GE3 | 21,470 | 1 | Tape & Reel | 8h | ||||||||
| SI7137DP-T1-GE3 | 9,000 | 3K | 2d | |||||||||
| SI7137DP-T1-GE3 | 3,000 | 3K | 2d | |||||||||
| SI7137DP-T1-GE3 | 3,000 | 3K | 8h | |||||||||
| SI7137DP-T1-GE3CT-ND | 7,410 | 1 | Cut Tape | 8h |
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-42 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance1.95 mΩ
Drain to Source Voltage (Vdss)-20 V
Fall Time110 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance20 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
Power Dissipation6.25 W
Rds On Max1.95 mΩ
Resistance1.95 mΩ
Rise Time150 ns
Schedule B8541290080
Threshold Voltage-1.4 V
Turn-Off Delay Time230 ns
Turn-On Delay Time100 ns
Dimensions
Height1.04 mm
Length6.15 mm
Width5.15 mm
Inventory History
3 month trend: -13.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI7137DP-T1-GE3.
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VishaySIR401DP-T1-GE3
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Descriptions
Descriptions of Vishay SI7137DP-T1-GE3 provided by its distributors.
Single P-Channel 200 V 1.95 mOhms Surface Mount Power Mosfet - PowerPAK SO-8
P-CHANNEL 20-V (D-S) MOSFET Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET Transistor; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):2.5mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1.4V ;RoHS Compliant: Yes
MOSFET, P CH, -20V, -60A, POWERPAK SO; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):0.0016ohm; Rds(on) Test Voltage Vgs:-10V; Power Dissipation Pd:104W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- Vishay Intertech
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -13.51%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)-42 A
Drain to Source Breakdown Voltage-20 V
Drain to Source Resistance1.95 mΩ
Drain to Source Voltage (Vdss)-20 V
Fall Time110 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance20 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation104 W
Min Operating Temperature-55 °C
Nominal Vgs-1.4 V
Number of Channels1
Number of Elements1
Power Dissipation6.25 W
Rds On Max1.95 mΩ
Resistance1.95 mΩ
Rise Time150 ns
Schedule B8541290080
Threshold Voltage-1.4 V
Turn-Off Delay Time230 ns
Turn-On Delay Time100 ns
Dimensions
Height1.04 mm
Length6.15 mm
Width5.15 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements