Vishay SI4490DY-T1-E3
In Stock
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 781-SI4490DY-T1-E3 | 11,205 | 1 | Tape & Reel | 1d | ||||||||
| SI4490DY-T1-E3 | 2,500 | 2500 | 1d | |||||||||
| SI4490DY-T1-E3CT-ND | 3,963 | 1 | Cut Tape | 1d | ||||||||
| SI4490DY-T1-E3 | 2,500 | 2500 | 22h | |||||||||
| SI4490DY-T1-E3 | 2,500 | 2500 | 1d |
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)2.85 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation1.56 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.56 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: -14.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Alternate Parts
This Part
Alternate Parts
Price @ 1000
$ 1.057
$ 1.152
Stock
253,930
323,767
Authorized Distributors
10
10
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SO
Drain to Source Voltage (Vdss)
200 V
200 V
Continuous Drain Current (ID)
2.85 A
2.85 A
Threshold Voltage
2 V
2 V
Rds On Max
80 mΩ
80 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
1.56 W
1.56 W
Input Capacitance
-
-
Engineering Resources
View Evaluation kits and Reference designs for Vishay SI4490DY-T1-E3.
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Descriptions
Descriptions of Vishay SI4490DY-T1-E3 provided by its distributors.
Single N-Channel 200 V 0.08 Ohms Surface Mount Power Mosfet - SOIC-8
SI4490DY-T1-E3 N-channel MOSFET Transistor, 2.8 A, 200 V, 8-Pin SOIC | Siliconix / Vishay SI4490DY-T1-E3
Trans MOSFET N-CH 200V 2.85A 8-Pin SOIC N T/R
N CHANNEL MOSFET, 200V, 4A, SOIC; Transi; N CHANNEL MOSFET, 200V, 4A, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):800mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
Manufacturer Aliases
Vishay has several brands around the world that distributors may use as alternate names. Vishay may also be known as the following names:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- VISHA
- Vishay Thin Film
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- VISHAY FOIL RESISTORS
- Vishay Intertech
- Vishay Semiconductor Opto Division
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VSHAY
- VISHAY ELECTRONIC
- Vishay General Semiconductor - Diodes Division
- Vishay Intertechnologies
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY PRECISION GROUP
- VISHAY AMERICAS
- Vishay Intertechnology Inc.
Inventory History
3 month trend: -14.03%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
1 part available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)2.85 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation1.56 W
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.56 W
Rds On Max80 mΩ
Resistance80 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time32 ns
Turn-On Delay Time14 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnknown
RoHSCompliant
Compliance Statements