INFRARED EMITTING DIODE; Peak Wavelength; INFRARED EMITTING DIODE; Peak Wavelength:935nm; Forward Current If(AV):50mA; Rise Time:700ns; Fall Time tf:700ns; Viewing Angle:50°; Supply Voltage Range:1.5V; Operating Temperature Min:-40°C; Operating Temperature Max:85°C
SEP8506 Series GaAs Infrared Emitting Diode, Side-emitting Plastic Package The SEP8506 is a gallium arsenide infrared emitting diode molded in a side-emitting red plastic package. The chip is positioned to emit radiation through a plastic lens from the side of the package.