onsemi RFP50N06

Transistor RFP50N06 N-Channel MOSFET 60 Volt 50 Amp TO-220AB

N-Channel 60 V 0.022 Ohm Flange Mount Power Mosfet - TO-220AB

N-Channel Power MOSFET 60V, 50A, 22mΩ

Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:60V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:131W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:50A; Current Temperature:25°C; Device Marking:RFP50N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:22mohm; Package / Case:TO-220AB; Power Dissipation Pd:131W; Power Dissipation Pd:131W; Pulse Current Idm:120A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA49018.