Vishay SI6423DQ-T1-GE3

Name: Vishay SI6423DQ-T1-GE3
Brand: Vishay
SKU: SI6423DQ-T1-GE3

Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8

$ 0.872

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
DigiKey	3	SI6423DQ-T1-GE3CT-ND	19,389	1	Cut Tape	2.670	1.719	1.176	0.872	0.872
Avnet	2	SI6423DQ-T1-GE3	27,000	3K						0.555	14h
Newark	2	SI6423DQ-T1-GE3	2,900	1	Cut Tape	2.000	2.000	0.878	0.698	0.698
Arrow Electronics		SI6423DQ-T1-GE3	685	1		2.665	1.717	1.178	0.942	0.942
Verical		SI6423DQ-T1-GE3	685	14				1.178	0.871	0.825

Inventory History

3 month trend: +52.38%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI6423DQ-T1-GE3.

Newark

Datasheet11 pages12 years ago

Datasheet11 pages10 years ago

Datasheet11 pages11 years ago

Farnell

iiiC

Inventory History

3 month trend:

+52.38%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI6423DQ-T1-GE3

VishaySI6423DQ-T1-E3

Price @ 1000

$ 0.872

$ 0.911

Stock

1,384,022

264,728

Authorized Distributors

Mount

Surface Mount

Case/Package

TSSOP

Drain to Source Voltage (Vdss)

-12 V

Continuous Drain Current (ID)

8.2 A

Threshold Voltage

-800 mV

Rds On Max

8.5 mΩ

Gate to Source Voltage (Vgs)

8 V

Power Dissipation

1.05 W

Input Capacitance

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-04-08

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI6423DQ-T1-GE3 provided by its distributors.

Single P-Channel 12 V 8.5 mOhm Surface Mount TrenchFET Power Mosfet - TSSOP-8

Future Electronics

MOSFET P-CH 12V 8.2A 8-TSSOP / Trans MOSFET P-CH 12V 8.2A 8-Pin TSSOP T/R

Win Source

P Channel Mosfet, -12V, 9.5A, Tssop, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:12V; Continuous Drain Current Id:9.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:8V; Power Dissipation:1.05W Rohs Compliant: No |Vishay SI6423DQ-T1-GE3.

Newark

MOSFET, P CH, -12V, -8.2A, TSSOP; Transistor Polarity:P Channel; Continuous Drain Current Id:-8.2A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.0112ohm; Rds(on) Test Voltage Vgs:-1.8V; Power Dissipation Pd:1.05W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSSOP; No. of Pins:8; MSL:-

Farnell