Vishay SI3900DV-T1-GE3

Name: Vishay SI3900DV-T1-GE3
Brand: Vishay
SKU: SI3900DV-T1-GE3

SI3900DV-T1-GE3 Dual N-channel Mosfet Transistor, 2 A, 20 V, 6-PIN TSOP

$ 0.479

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
DigiKey	3	SI3900DV-T1-GE3CT-ND	5,968	1	Cut Tape	1.600	1.008	0.671	0.479	0.479
Mouser		781-SI3900DV-GE3	59,782	1	Tape & Reel	1.600	1.010	0.671	0.479	0.413
Win Source		WS-SI3900DV-T1-GE3	4,000	290					0.166	0.135	15h
Worldway Electronics		SI3900DV-T1-GE3	20,932	7			0.100	0.097	0.091	0.091	18h
Esaler Electronic		SI3900DV-T1-GE3	3,000			0.396	0.393	0.390	0.387	0.384	7d

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI3900DV-T1-GE3.

IHS

Datasheet6 pages3 years ago

Datasheet9 pages13 years ago

_legacy Avnet

element14

Future Electronics

RS (Formerly Allied Electronics)

Inventory History

3 month trend:

+0.00%

CAD Models

Download Vishay SI3900DV-T1-GE3 symbol, footprint, and 3D STEP models from our trusted partners.

source	eCAD	mCAD	FILES
Component Search Engine	SymbolFootprint	3D	Download

The partner site will open in a new tab when downloading their CAD models

By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Alternate Parts

This Part

Alternate Parts

VishaySI3900DV-T1-GE3

VishaySI3900DV-T1-E3

Price @ 1000

$ 0.479

$ 0.539

Stock

307,740

1,017,908

Authorized Distributors

Mount

Surface Mount

Case/Package

TSOP

Drain to Source Voltage (Vdss)

20 V

Continuous Drain Current (ID)

2 A

Threshold Voltage

600 mV

Rds On Max

125 mΩ

Gate to Source Voltage (Vgs)

12 V

Power Dissipation

830 mW

Input Capacitance

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-03-01

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-12-21

LTD Date2025-06-21

Related Parts

InfineonIRF5851TRPBF

MOSFET N/P-CH 20V 2.7A 6-TSOP / Trans MOSFET N/P-CH Si 20V 2.7A/2.2A 6-Pin TSOP T/R

Details

onsemiNTGS3441PT1G

Power MOSFET 20V 3.16A 110 mOhm Single P-Channel TSOP6

Details

VishaySI3585CDV-T1-GE3

Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 3.9A 6TSOP

Details

InfineonBSL214N L6327

MOSFET, N-CH, DUA,L 20V, 1.5A, 6TSOP; Transistor Polarity:Dual N Channel; Contin

Details

onsemiNTGD3133PT1G

Power MOSFET 20V 2.5A 145 mOhm Dual P-Channel TSOP6

Details

InfineonBSL207NL6327

Trans Mosfet N-ch 20V 2.1A 6-PIN TSOP T/r

Details

Descriptions

Descriptions of Vishay SI3900DV-T1-GE3 provided by its distributors.

SI3900DV-T1-GE3 DUAL N-CHANNEL MOSFET TRANSISTOR, 2 A, 20 V, 6-PIN TSOP

RS (Formerly Allied Electronics)

Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R

Avnet

1.15W 12V 1.5V@ 250¦ÌA 4nC@ 4.5V 2N 20V 125m¦¸@ 2.4A,4.5V 2A TSOP-6 1.7mm*1mm

UnikeyIC

Power Field-Effect Transistor, 2A I(D), 20V, 0.125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C

IHS

Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current, Id:2.4A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.125ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:1.5V ;RoHS Compliant: Yes

Newark