Vishay SI2306BDS-T1-GE3

Name: Vishay SI2306BDS-T1-GE3
Brand: Vishay
SKU: SI2306BDS-T1-GE3

Trans Mosfet N-ch 30V 3.16A 3-PIN SOT-23 T/r

$ 0.257

NRND

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Arrow Electronics		SI2306BDS-T1-GE3	716	1		0.707	0.485	0.335	0.264	0.264
Verical		SI2306BDS-T1-GE3	716	8			0.485	0.335	0.203	0.167
Future Electronics		SI2306BDS-T1-GE3	15,000	3K	Tape & Reel					0.255
DigiKey	2	SI2306BDS-T1-GE3CT-ND	2,469	1	Cut Tape	0.920	0.572	0.371	0.256	0.256
TME	2	SI2306BDS-T1-GE3	0	3K						0.356*	2d

Inventory History

3 month trend: +295%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI2306BDS-T1-GE3.

IHS

Datasheet8 pages4 years ago

ODG (Origin Data Global)

Newark

element14 APAC

Future Electronics

Inventory History

3 month trend:

+295%

CAD Models

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Alternate Parts

This Part

Alternate Parts

VishaySI2306BDS-T1-GE3

VishaySI2306BDS-T1-E3

Price @ 1000

$ 0.257

$ 0.325

Stock

283,563

718,175

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23-3

TO-236

Drain to Source Voltage (Vdss)

30 V

Continuous Drain Current (ID)

3.16 A

Threshold Voltage

3 V

Rds On Max

47 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

1.25 W

Input Capacitance

305 pF

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-03-03

Lifecycle StatusNRND (Last Updated: 3 months ago)

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Descriptions

Descriptions of Vishay SI2306BDS-T1-GE3 provided by its distributors.

Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R

Verical

MOSFET Devices; VISHAY; SI2306BDS-T1-GE3; 30 V; 4 A; 20 V; 1.25 W

Maritex

750mW(Ta) 20V 3V@ 250¦ÌA 4.5nC@ 5 V 1N 30V 47m¦¸@ 3.5A,10V 3.16A 305pF@15V SOT-23-3,TO-236 1.12mm

UnikeyIC

N-CHANNEL-FET 4A 30V SOT23 RoHSconf

Rutronik

MOSFET 30V 4.0A 1.25W 47mohm @ 4.5V

Jak Electronics

N CHANNEL MOSFET, 30V, 4A, TO-236

Farnell

Power Field-Effect Transistor, 3.16A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA

IHS

N CHANNEL MOSFET, 30V, 4A, TO-236; Trans; N CHANNEL MOSFET, 30V, 4A, TO-236; Transistor Polarity:N Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs:3V; No. of Pins:3

element14 APAC