Vishay SI1401EDH-T1-GE3

Name: Vishay SI1401EDH-T1-GE3
Brand: Vishay
SKU: SI1401EDH-T1-GE3

Single P-Channel 12 V 34 mOhm 36 nC Surface Mount Mosfet - SOT-363 (SC-70)

$ 0.206

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Distributor		SKU		Min	Pkg
Newark	2	SI1401EDH-T1-GE3	3,000	1	Cut Tape	1.240	1.240	0.570	0.300	0.300
DigiKey	3	SI1401EDH-T1-GE3CT-ND	11,034	1	Cut Tape	0.760	0.468	0.301	0.205	0.143
TME	2	SI1401EDH-T1-GE3	0	1		0.700	0.465	0.271	0.182	0.153	1h
TTI		SI1401EDH-T1-GE3	0	3K	Tape & Reel					0.141	5h
TTI Europe		SI1401EDH-T1-GE3	6,000	3K	Tape & Reel					0.144*	5h

Inventory History

3 month trend: -41.05%

CAD Models

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Datasheets & Documents

Download datasheets and manufacturer documentation for Vishay SI1401EDH-T1-GE3.

Farnell

Datasheet12 pages10 years ago

Datasheet12 pages13 years ago

Datasheet12 pages12 years ago

Datasheet12 pages11 years ago

element14 APAC

Future Electronics

ODG (Origin Data Global)

Newark

Inventory History

3 month trend:

-41.05%

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Vishay SI1401EDH-T1-GE3 provided by its distributors.

Single P-Channel 12 V 34 mOhm 36 nC Surface Mount Mosfet - SOT-363 (SC-70)

Future Electronics

Trans MOSFET P-CH 12V 4A 6-Pin SC-70 T/R

Verical

Small Signal Field-Effect Transistor, 4A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

Vishay PMOS TrenchFET, Vds=12 V, 4 A, SOT-363, , 6

UnikeyIC

MOSFET, P CH, -12V, -4A, SOT-363; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.072ohm; Rds(on) Test Voltage Vgs:-1.5V; Power Dissipation Pd:2.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOT-363; No. of Pins:6; MSL:-

Farnell