Toshiba TK35N65W,S1F
$ 5.227
Production
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | TK35N65W,S1F | 0 | 30 | 21h | ||||||||
| Arrow Electronics | TK35N65W,S1F | 0 | 30 | |||||||||
| Mouser | 757-TK35N65WS1F | 6 | 1 | Tube | ||||||||
| Worldway Electronics | TK35N65W,S1F | 16,256 | 7 | Tube | 2d | |||||||
| UnikeyIC | TK35N65W,S1F | 6 | 1 | Tube | 18h |
Inventory History
3 month trend: -20.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
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Descriptions
Descriptions of Toshiba TK35N65W,S1F provided by its distributors.
X35 Pb-F Power Mosfet Transistor To-247(Os) Moq=2000 Pd=270W F=1Mhz
Trans MOSFET N-CH Si 650V 35A 3-Pin(3+Tab) TO-247 Tube
N-Channel 650 V 35A (Ta) 270W (Tc) Through Hole TO-247
Power Field-Effect Transistor, 35A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
270W(Tc) 30V 3.5V@2.1mA 100nC@ 10 V 1N 650V 80m¦¸@ 17.5A,10V 35A 4.1nF@300V TO-247 15.94mm*5.02mm*20.95mm
Manufacturer Aliases
Toshiba has several brands around the world that distributors may use as alternate names. Toshiba may also be known as the following names:
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- Toshiba America Electronic Components
- TSH
- Toshiba Memory America Inc
- MARKTECH OPTOELECTRONICS
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba Semiconductor
- Toshiba Lifestyle Products
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- TOBHIBA
- TOSHBA
Inventory History
3 month trend: -20.00%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)35 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance80 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.1 nF
Max Operating Temperature150 °C
Max Power Dissipation270 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max80 mΩ
Rise Time30 ns
Schedule B8541290080
Turn-Off Delay Time150 ns
Turn-On Delay Time70 ns