onsemi FCH067N65S3-F155

Name: onsemi FCH067N65S3-F155
Brand: onsemi
SKU: FCH067N65S3-F155

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247

$ 3.287

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Price and Stock

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	FCH067N65S3-F155	80					3.290	2.940	2.770	19h
DigiKey		FCH067N65S3-F155OS-ND	357	1	Tube	7.750	7.750	4.488	3.287	3.287
Newark		FCH067N65S3-F155	0	1		8.900	5.770	5.090	5.090	5.090
Onlinecomponents.com		FCH067N65S3-F155	0	113	Bulk				3.260	3.260
Master Electronics		FCH067N65S3-F155	0	113					3.260	3.260

Inventory History

3 month trend: -65.66%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FCH067N65S3-F155.

Upverter

Technical Drawing1 page6 years ago

Datasheet10 pages6 years ago

IHS

Master Electronics

onsemi

element14 APAC

Inventory History

3 month trend:

-65.66%

CAD Models

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Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2016-05-23

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

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Descriptions

Descriptions of onsemi FCH067N65S3-F155 provided by its distributors.

N-Channel Power MOSFET, SUPERFET® III, Easy Drive, 650 V, 44 A, 67 mΩ, TO-247

onsemi

Power Field-Effect Transistor, 44A I(D), 650V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB

Semicontronic

Mosfet, N Channel, 650V, 44A, To-247-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.059Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4.5V; Power Rohs Compliant: Yes |Onsemi FCH067N65S3-F155

Newark

SuperFET® III MOSFET is Fairchild Semiconductor’s brandnew high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SuperFET III MOSFET is very suitable for various power system for miniaturization and higher efficiency

Fairchild Semiconductor