STMicroelectronics STN1NK80Z
$ 0.465
Production
Inventory History
3 month trend: +7.67%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STN1NK80Z.
CAD Models
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Supply Chain
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-06-14
Lifecycle StatusProduction (Last Updated: 4 months ago)
Related Parts
InfineonBSP125 L6327
MOSFET, N-CH, 600V, 120MA, SOT-223; Transistor Polarity:N Channel; Continuous Dr
Descriptions
Descriptions of STMicroelectronics STN1NK80Z provided by its distributors.
STN1NK80Z N-CHANNEL MOSFET TRANSISTOR, 0.25 A, 800 V, 3 + TAB-PIN SOT-223
MOSFET N-CH 800V 0.25A SOT223 / Trans MOSFET N-CH 800V 0.25A 4-Pin(3+Tab) SOT-223 T/R
Power MOSFET, N Channel, 800 V, 250 mA, 16 Ohm, SOT-223, 3 Pins, Surface Mount
N-channel 800 V, 13 Ohm typ., 0.25 A SuperMESH Zener protected Power MOSFET in a SOT-223 package
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=800 V, 250 mA, SOT-223, , 3
MOSFET, N CH, 800V, 0.25A, SOT223; Transistor Polarity:N Channel; Continuous Drain Current Id:250mA; Drain Source Voltage Vds:800V; On Resistance Rds(on):13ohm; Rds(on) Test Voltage Vgs:30V; Threshold Voltage Vgs:3.75V;
Mosfet, N Channel, 800V, 0.25A, Sot223; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:500Ma; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):13Ohm; Tensión Vgs De Medición Rds(On):30V |Stmicroelectronics STN1NK80Z
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 1 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) Ohm = 16 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 23 / Turn-OFF Delay Time ns = 18 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
Manufacturer Aliases
STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
Inventory History
3 month trend: +7.67%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOT-223
MountSurface Mount
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)250 mA
Current Rating250 mA
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance16 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance160 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation2.5 W
Rds On Max16 Ω
Resistance16 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time22 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)800 V
Dimensions
Height1.82 mm
Length6.5 mm
Width3.5 mm
Datasheets & Documents
Download datasheets and manufacturer documentation for STMicroelectronics STN1NK80Z.
Compliance
Environmental Classification
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant