onsemi FQT1N60CTF-WS

Name: onsemi FQT1N60CTF-WS
Brand: onsemi
SKU: FQT1N60CTF-WS

Power Mosfet, N-channel, Qfet®, 600 V, 0.2 A, 11.5 Ω, SOT-223

$ 0.364

EOL

Manufacturer Page Datasheet

Price and Stock

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Distributor		SKU		Min	Pkg
Newark	3	FQT1N60CTF-WS	0	1	Cut Tape	1.030	0.692	0.460	0.364	0.364
Avnet		FQT1N60CTF-WS	0	4K							20h
element14 APAC	2	FQT1N60CTF-WS	0	1	Cut Tape	1.143*	0.762*	0.507*	0.303*	0.272*	6h
Farnell	2	FQT1N60CTF-WS	0	1	Cut Tape	1.158*	0.777*	0.518*	0.370*	0.309*	17h
Component Stockers USA		FQT1N60CTF-WS	5,590			0.730	0.630	0.440	0.310	0.240	>1wk

Inventory History

3 month trend: -8.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi FQT1N60CTF-WS.

onsemi

Datasheet8 pages5 years ago

Datasheet8 pages18 years ago

Datasheet0 pages0 years ago

Future Electronics

Newark

Upverter

JRH Electronics

Inventory History

3 month trend:

-8.00%

CAD Models

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Supply Chain

Country of OriginSouth Korea

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2008-10-20

Lifecycle StatusEOL (Last Updated: 2 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)

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Descriptions

Descriptions of onsemi FQT1N60CTF-WS provided by its distributors.

Power MOSFET, N-Channel, QFET®, 600 V, 0.2 A, 11.5 Ω, SOT-223

onsemi

N-Channel 600 V 11.5 Ohm Surface Mount Mosfet - SOT-223

Future Electronics

Trans MOSFET N-CH 600V 0.2A 4-Pin(3+Tab) SOT-223 T/R

Avnet

MOSFET, N-CH, 600V, 0.2A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 200mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 9.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor