STMicroelectronics SCT30N120

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
$ 16.92
Obsolete
Manufacturer PageDatasheet

Price and Stock

See all price breaks
DistributorSKUMinPkg
Future ElectronicsSCT30N1203462Tube
TME
2
SCT30N120161
7h
NewarkSCT30N12001
AvnetSCT30N1200600
11h
FarnellSCT30N1205761
9h

Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics SCT30N120.

STMicroelectronics

Datasheet13 pages13 years ago

Future Electronics

element14 APAC

Newark

Inventory History

3 month trend:
-28.90%
Powered bySpectra logo

CAD Models

Download STMicroelectronics SCT30N120 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-21
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2026-02-15
LTD Date2026-08-15

Related Parts

STMicroelectronicsSCT20N120
Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
Details
VishayIRFPF40PBF
Single N-Channel 900 V 2.5 Ohms Flange Mount Power Mosfet - TO-247AC
Details
VishayIRFPG40PBF
Transistor MOSFET N-CH 1KV 4.3A 3-Pin (3+Tab) TO-247AC
Details
VishayIRFPF30PBF
Single N-Channel 900 V 3.7 Ohms Flange Mount Power Mosfet - TO-247AC
Details
STMicroelectronicsSTWA40N95K5
N-channel 950 V, 0.110 Ohm typ., 38 A MDmesh K5 Power MOSFET in a TO-247 long leads package
Details
STMicroelectronicsSTW23N85K5
N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package
Details

Descriptions

Descriptions of STMicroelectronics SCT30N120 provided by its distributors.

Silicon carbide Power MOSFET 1200 V, 45 A, 90 mOhm (typ. TJ = 150 C) in an HiP247 package
STMicroelectronics
Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Semicontronic
Single N-Channel 1200 V 270 W 105 nC SiC Through Hole Mosfet - HiP247
Future Electronics
MOSFET, N CH, 1.2KV, 40A, HIP247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.08ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 2.6V;
Farnell
Mosfet, N Ch, 1.2Kv, 40A, Hip247-3; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:40A; Tensión Drenaje-Fuente Vds:1.2Kv; Resistencia De Activación Rds(On):0.08Ohm; Tensión Vgs De Medición Rds(On):20V |Stmicroelectronics SCT30N120
Newark

Images

Farnell
Newark
TME
Lanka Micro
Future Electronics

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics