STMicroelectronics MJD45H11T4

Bipolar Transistors (BJT); MJD45H11T4; STMICROELECTRONICS; PNP; 3; 80 V; 8 A
$ 0.376
Production

Price and Stock

Datasheets & Documents

Download datasheets and manufacturer documentation for STMicroelectronics MJD45H11T4.

Newark

Datasheet11 pages14 years ago

Future Electronics

Factory Futures

Inventory History

3 month trend:
+6.81%

CAD Models

Download STMicroelectronics MJD45H11T4 symbol, footprint, and 3D STEP models from our trusted partners.

sourceeCADmCADFILES
Component Search Engine
SymbolFootprint
3DDownload
SnapEDA
Footprint
3DDownload
Ultra Librarian
SymbolFootprint
Download
The partner site will open in a new tab when downloading their CAD models
By downloading CAD models from Octopart, you agree to our Terms & Conditions and Privacy Policy.

Supply Chain

Lifecycle StatusProduction (Last Updated: 4 months ago)

Related Parts

8 A, 80 V NPN Power Bipolar Junction Transistor
NPN 1.75 W 80 V 8 A Surface Mount Epitaxial Silicon Transistor - TO-252-3
8 A, 80 V NPN Power Bipolar Junction Transistor
NXP SemiconductorsBUJD105AD,118
Power Bipolar Transistor, 8A I(C), 1-Element, NPN
Diodes Inc.MJD31C-13
Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount
Diodes Inc.2DB1184Q-13
Trans GP BJT PNP 50V 3A 15000mW Automotive 3-Pin(2+Tab) DPAK T/R

Descriptions

Descriptions of STMicroelectronics MJD45H11T4 provided by its distributors.

Bipolar Transistors (BJT); MJD45H11T4; STMICROELECTRONICS; PNP; 3; 80 V; 8 A
Bipolar (Bjt) Single Transistor, Pnp, -80 V, 20 W, -8 A, 40 Rohs Compliant: Yes |Stmicroelectronics MJD45H11T4
Trans GP BJT PNP 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R
Low voltage complementary power transistor Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin
MJD45H11 Series PNP 80 V 8 A Complementary Silicon Transistor - TO-252
TRANSISTOR, BJT, PNP, -80V, -8A, TO252-3; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: -80V; Transition Frequency ft: -; Power Dissipation Pd: 20W; DC Collector Current: -8A; DC Current Gain hFE: 40hFE; Transi
Transistor Polarity = PNP / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel

Manufacturer Aliases

STMicroelectronics has several brands around the world that distributors may use as alternate names. STMicroelectronics may also be known as the following names:

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics

Part Number Aliases

This part may be known by these alternate part numbers:

  • MJD45H11-T4