onsemi MJD44H11TM

Name: onsemi MJD44H11TM
Brand: onsemi
SKU: MJD44H11TM

8 A, 80 V NPN Power Bipolar Junction Transistor

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Flip Electronics		MJD44H11TM	10,000								7d
element14 APAC	2	MJD44H11TM	0	1	Cut Tape	0.776*	0.542*	0.459*	0.332*	0.308*	3h
Farnell	2	MJD44H11TM	0	1	Cut Tape	0.786*	0.623*	0.364*	0.285*	0.262*	13h
Win Source		WS-MJD44H11TM	10,200	185					0.244	0.212	14h
Worldway Electronics		MJD44H11TM	29,045	7	Tape & Reel		0.079	0.076	0.072	0.072	13h

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MJD44H11TM.

onsemi

Datasheet9 pages9 years ago

Datasheet8 pages15 years ago

Datasheet8 pages18 years ago

Datasheet0 pages0 years ago

IHS

element14 APAC

Farnell

Fairchild Semiconductor

Inventory History

3 month trend:

+0.00%

CAD Models

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Alternate Parts

This Part

Alternate Parts

onsemiMJD44H11TM

onsemiMJD44H11T4G

Price @ 1000

$ 0.303

Stock

230,811

8,583,473

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

8 A

Transition Frequency

50 MHz

85 MHz

Collector Emitter Saturation Voltage

1 V

hFE Min

Power Dissipation

1.75 W

Supply Chain

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-01-01

Lifecycle StatusObsolete (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 3 days ago)

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KSH Series NPN 1.75 W 60 V 10 A SMT Epitaxial Silicon Transistor - TO-252-3

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onsemiKSH3055TM

TRANS NPN 60V 10A DPAK / Bipolar (BJT) Transistor NPN 60 V 10 A 2MHz 1.75 W Surface Mount D-Pak

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Descriptions

Descriptions of onsemi MJD44H11TM provided by its distributors.

8 A, 80 V NPN Power Bipolar Junction Transistor

onsemi

MJD Series NPN 1.75 W 80 V 8 A SMT Epitaxial Silicon Transistor - TO-252-3

Future Electronics

Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

IHS

TRANSISTOR, NPN, D-PAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency Typ ft:50MHz; Power Dissipation Pd:1.75W; DC Collector Current:8A; DC Current Gain hFE:60; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1V; Continuous Collector Current Ic Max:3A; Current Gain Hfe Max:400; Current Ic Continuous a Max:8A; Current Ic hFE:3A; Current Ic hfe -Do Not Use See ID 1182:3000mA; DC Current Gain Hfe Max:400; DC Current Gain Hfe Min:200; Gain Bandwidth ft Typ:50MHz; Hfe Min:200; Package / Case:D-PAK; Power Dissipation Pd:1.75W; Power Dissipation Ptot Max:20W; Termination Type:SMD

element14 APAC