ROHM SCT2080KEGC11

Name: ROHM SCT2080KEGC11
Brand: ROHM
SKU: SCT2080KEGC11

Transistor MOSFET N-CH 1200V 40A 3-Pin TO-247N Tube

$ 17.333

Production

Manufacturer Page Datasheet

Price and Stock

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Non-Authorized Stocking Distributors

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Distributor		SKU		Min	Pkg
CoreStaff	2	ST64343543	790	1		18.172	12.563	12.148	12.148	12.148	7h
Verical	3	SCT2080KEGC11	97	1		23.781	17.816	15.735	15.434	15.434
Arrow Electronics		SCT2080KEGC11	97	1		23.781	17.816	17.816	17.816	17.816
DigiKey		846-SCT2080KEGC11-ND	1,684	1	Tube	28.200	20.527	20.527	16.045	16.045
Newark		SCT2080KEGC11	429	1		23.350	17.270	16.850	16.850	16.850

Inventory History

3 month trend: +0.00%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for ROHM SCT2080KEGC11.

IHS

Datasheet13 pages7 years ago

Inventory History

3 month trend:

+0.00%

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Alternate Parts

This Part

Alternate Parts

ROHMSCT2080KEGC11

MicrochipMSC080SMA120B

Price @ 1000

$ 17.333

$ 9.93

Stock

41,235

57,769

Authorized Distributors

6

Mount

-

Case/Package

-

TO-247-3

Drain to Source Voltage (Vdss)

-

1.2 kV

Continuous Drain Current (ID)

40 A

Threshold Voltage

-

Rds On Max

-

Gate to Source Voltage (Vgs)

-

23 V

Power Dissipation

-

231 W

Input Capacitance

-

Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2020-01-22

Lifecycle StatusProduction (Last Updated: 3 months ago)

Descriptions

Descriptions of ROHM SCT2080KEGC11 provided by its distributors.

Transistor MOSFET N-CH 1200V 40A 3-Pin TO-247N Tube

Avnet Silica

SCT2080 Series N-Channel 1200 V 40A 262W Through Hole MOSFET TO-247-3

Future Electronics

10¦ÌA 106nC@ 18 V 262W(Tc) 2.08nF@800V 117m¦¸@ 10A,18V 10A 1.2KV 4V@4.4mA 22V 1N TO-247N

UnikeyIC

Trans MOSFET N-CH SiC 1.2KV 35A 3-Pin(3+Tab) TO-247N Tube

Verical

场效应管, MOSFET, N沟道, 1.2KV, 40A, TO-247N;

element14 APAC

Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

IHS

SiC-N-Ch 1200V 40A 262W 0,117R TO247

Schukat

SIC MOSFET, N-CH, 1.2KV, 40A, TO-247N-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:18V; Power Dissipation:262WRoHS Compliant: Yes

Newark