onsemi MMBTA06

Name: onsemi MMBTA06
Brand: onsemi
SKU: MMBTA06

80V 300mW 100@10mA, 1V 0.5A NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS

Obsolete

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

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Distributor		SKU		Min	Pkg
Farnell	2	MMBTA06	0	5	Cut Tape		0.297*	0.117*	0.059*	0.047*	21h
Win Source		WS-MMBTA06	27,000	2035						0.024	22h
Worldway Electronics		MMBTA06	29,860	7	Tape & Reel		0.010	0.010	0.010	0.010	20h
Voyager Components		MMBTA06-FAIRCHILD-0949	430			0.060	0.060	0.045	0.025	0.025	3h
Chipsmall Limited		MMBTA06	120,000	1		0.029	0.020	0.012	0.010	0.010	1d

CAD Models

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Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi MMBTA06.

Upverter

Technical Drawing1 page6 years ago

Datasheet0 pages0 years ago

IHS

Farnell

Fairchild Semiconductor

onsemi

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Alternate Parts

This Part

Alternate Parts

onsemiMMBTA06

onsemiMMBTA06LT1G

Price @ 1000

$ 0.034

Stock

305,297

155,908,178

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Polarity

NPN

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

500 mA

Transition Frequency

100 MHz

Collector Emitter Saturation Voltage

250 mV

hFE Min

100

Power Dissipation

350 mW

Supply Chain

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-01-01

Lifecycle StatusObsolete (Last Updated: 6 days ago)

LTB Date2018-11-23

LTD Date2019-05-23

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 6 days ago)

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Descriptions

Descriptions of onsemi MMBTA06 provided by its distributors.

80V 300mW 100@10mA,1V 0.5A NPN SOT-23(TO-236) Bipolar Transistors - BJT ROHS

Dasenic

NPN GENERAL PURPOSE AMPLIFIER Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB

ComSIT Distribution GmbH

Trans GP BJT NPN 80V 0.5A 350mW 3-Pin SOT-23 T/R

Verical

NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.

Fairchild Semiconductor

Transistor; Transistor Type:Bipolar; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):100; Package/Case:SOT-323; C-E Breakdown Voltage:80V; DC Collector Current:0.5A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

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