Diodes Inc. MMBTA06-7-F

Name: Diodes Inc. MMBTA06-7-F
Brand: Diodes Inc.
SKU: MMBTA06-7-F

Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mA, 300 mW, SOT-23, Surface Mount

$ 0.059

Production

Manufacturer Page Datasheet

Price and Stock

Authorized Distributors

Non-Authorized Stocking Distributors

Non-Authorized Dealers

See all price breaks

Distributor		SKU		Min	Pkg
Avnet		MMBTA06-7-F	3,000	3K						0.020	2d
Newark	2	MMBTA06-7-F	820	5	Cut Tape		0.150	0.114	0.063	0.063
Future Electronics	2	MMBTA06-7-F	1,974,000	3K	Tape & Reel					0.026
TME	2	MMBTA06-7-F	10,836	1		0.206*	0.139*	0.074*	0.043*	0.029*	16h
Conrad		3409546	3,000			0.023*	0.023*	0.023*	0.023*	0.023*	8h

Inventory History

3 month trend: -35.23%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Datasheets & Documents

Download datasheets and manufacturer documentation for Diodes Inc. MMBTA06-7-F.

IHS

Datasheet7 pages2 years ago

Newark

Diodes Inc SCT

element14 APAC

TME

Inventory History

3 month trend:

-35.23%

CAD Models

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Alternate Parts

This Part

Alternate Parts

Diodes Inc.MMBTA06-7-F

onsemiMMBTA06LT1G

Price @ 1000

$ 0.059

$ 0.034

Stock

7,473,938

159,830,788

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Polarity

NPN

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

500 mA

Transition Frequency

100 MHz

Collector Emitter Saturation Voltage

250 mV

hFE Min

100

Power Dissipation

310 mW

Supply Chain

Country of OriginMainland China, Taiwan

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2003-04-22

Lifecycle StatusProduction (Last Updated: 4 months ago)

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Descriptions

Descriptions of Diodes Inc. MMBTA06-7-F provided by its distributors.

Bipolar (BJT) Single Transistor, NPN, 80 V, 500 mA, 300 mW, SOT-23, Surface Mount

Avnet Silica

Transistor General Purpose BJT NPN 80 Volt 0.5 Amp 3-Pin SOT-23 Tape And Reel

Jameco

Trans GP BJT NPN 80V 0.5A 350mW 3-Pin SOT-23 T/R / TRANS NPN 80V 0.5A SOT23-3

Win Source

Small Signal Bipolar Transistor, 0.5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon

Semicontronic

TRANSISTOR, NPN, SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:100MHz; Power Dissipation Pd:300mW; DC Collector Current:500mA; DC Current Gain hFE:100hFE; Transistor Case

element14 APAC