onsemi HGTG11N120CND

Name: onsemi HGTG11N120CND
Brand: onsemi
SKU: HGTG11N120CND

Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247

$ 3.055

Production

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Price and Stock

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Distributor		SKU		Min	Pkg
Avnet		HGTG11N120CND	15,300	157					4.143	3.938	8h
Newark		HGTG11N120CND	763	1		7.560	6.640	4.500	4.200	4.200
Master Electronics		HGTG11N120CND	360	30				2.590	2.460	2.430
Onlinecomponents.com		HGTG11N120CND	360	30	Bulk			2.590	2.460	2.430
Verical	2	HGTG11N120CND	213	107					3.150	2.963

Inventory History

3 month trend: -7.78%

CAD Models

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Alternate Parts

0 parts available

Datasheets & Documents

Download datasheets and manufacturer documentation for onsemi HGTG11N120CND.

IHS

Datasheet0 pages0 years ago

Datasheet10 pages5 years ago

onsemi

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element14 APAC

Inventory History

3 month trend:

-7.78%

CAD Models

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Supply Chain

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1999-01-01

Lifecycle StatusProduction (Last Updated: 4 days ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 4 days ago)

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Descriptions

Descriptions of onsemi HGTG11N120CND provided by its distributors.

Trans IGBT Chip N-CH 1200V 43A 298000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 43A 298W TO247

Win Source

43A, 1200V, NPT SERIES N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247

ComSIT Distribution GmbH

298W 43A 1.2kV NPT (non-penetrating type) TO-247AC-3 IGBT Transistors / Modules ROHS

Digi-ic_SMART PIONEER

HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247

Future Electronics

IGBT, N; Transistor Type:IGBT; DC Collector Current:43A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:298W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Current Ic Continuous a Max:43A; Package / Case:TO-247; Power Dissipation Max:298W; Power Dissipation Pd:298W; Termination Type:SMD; Transistor Polarity:N Channel; Voltage Vces:1.2kV

element14 APAC

HGTG11N120CND is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS, solar inverter, motor control and power supplies.

Fairchild Semiconductor